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Methods for initializing, setting and resetting resistive random access memory

A technology of random access memory and initialization method, which is applied in the field of semiconductor manufacturing, can solve problems such as unstable working status of memory, and achieve the effect of avoiding logical judgment errors

Active Publication Date: 2011-07-20
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The problem to be solved by the present invention is to provide an initialization method and a setting and resetting method of a resistance random access memory, and to improve the problem that the working state of the memory is unstable due to uncontrollable jumping of the resistance state of the storage resistance during the initialization, setting and resetting process

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  • Methods for initializing, setting and resetting resistive random access memory
  • Methods for initializing, setting and resetting resistive random access memory
  • Methods for initializing, setting and resetting resistive random access memory

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Embodiment Construction

[0053] It can be seen from the background technology that in the initialization, setting and reset methods of the existing RRAM, the transition process of the storage resistor from the high resistance state to the low resistance state and from the low resistance state to the high resistance state is a sudden change process, so the resistance value of the storage resistor The change process is difficult to control and may lead to logical errors when the memory cell is read. However, there is a theory in the industry that points out that the resistance state change of RRAM resistance switching materials is related to the energy accumulation of the current flowing through it, that is, when the energy accumulation of the current flowing through it breaks through a certain critical value, its resistance value will change drastically, so In RRAM, precisely controlling the energy of the current flowing through the storage resistor can control the change process of its resistance state...

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Abstract

The invention provides methods for initializing, setting and resetting a resistive random access memory. The method for initializing the resistive random access memory comprises the following steps of: providing a resistive random access memory to be activated, wherein the resistive random access memory comprises a storage resistor; carrying out rapid initialization on the resistive random accessmemory firstly; during the rapid initialization, inputting voltage pulses with gradually increasing energy into the storage resistor; then, carrying out precise initialization on the resistive randomaccess memory; and during the precise initialization, inputting voltage pulses with constant energy into the storage resistor. In the invention, the initialization operation is divided into the rapidinitialization stage and the precise initialization stage, so that the resistance drop can be precisely controlled when the storage resistor is converted from a high impedance state to a low impedance state.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an initialization method and a setting and resetting method of a resistance random access memory. Background technique [0002] At present, new storage technologies with low development cost, high speed, high storage density, simple manufacturing and good compatibility with current complementary metal oxide (CMOS) semiconductor integrated circuit processes have attracted worldwide attention. The memory technology based on resistive random access memory (Resistive Random Access Memory, RRAM is referred to as RRAM) is currently the focus of many device manufacturers, because this technology can provide higher density, lower cost and lower power consumption. power non-volatile memory. The resistance value of the RRAM memory cell will change greatly after the pulse voltage is applied, and this resistance value can still be maintained after the power is turned off...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/20
CPCG11C13/0007G11C13/0069G11C2013/0083G11C2013/0092
Inventor 宋立军黄晓辉邹擎天吴金刚季明华
Owner SEMICON MFG INT (SHANGHAI) CORP