Temperature sensor based on magnetic tunnel junction component

A technology of temperature sensor and magnetic tunnel junction, applied in the direction of thermometers using electric/magnetic elements directly sensitive to heat, devices using electro-magnetic effects, thermometers, etc., can solve the problem of not having temperature detection and over-temperature protection flow protection etc.

Inactive Publication Date: 2011-08-10
NORTH CHINA UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Can not have temperature detection, over-temperature protection, over-current protection and other functions at the same time

Method used

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  • Temperature sensor based on magnetic tunnel junction component
  • Temperature sensor based on magnetic tunnel junction component
  • Temperature sensor based on magnetic tunnel junction component

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Embodiment Construction

[0014] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0015] The temperature sensor based on the magnetic tunnel junction device of the present invention, its preferred specific embodiment is, comprise MTJ device, PMOS device and analog switch, the source pole of described PMOS device is connected to power supply, and drain pole is connected with the input of described MTJ device The output terminal of the MTJ device is connected to the ground or circuit through the analog switch, and the drain and gat...

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Abstract

The invention discloses a temperature sensor based on a magnetic tunnel junction component. The temperature sensor comprises a magnetic tunnel junction (MTJ) component, a p-channel metal oxide semiconductor (PMOS) component and an analog switch. A source of the PMOS component is connected with a power supply, and a drain of the PMOS component is connected with an input end of the MTJ component and is led out of a voltage output end; an output end of the MTJ component is grounded or connected with a circuit through the analog switch; and a drain of the PMOS component and a grid of the PMOS component are in short-circuit connection. The temperature sensor can also comprise an operational amplifier. A negative input end of the operational amplifier is connected with the voltage output end and a positive input end of the operational amplifier is connected to a reference voltage. The sensor can be compatible with a complementary metal oxide semiconductor (CMOS) technology and has the functions of temperature monitoring, overtemperature protection, overcurrent protection and the like.

Description

technical field [0001] The invention relates to a temperature sensor, in particular to a temperature sensor based on a magnetic tunnel junction device. Background technique [0002] At present, there are many temperature sensors, including temperature sensors designed using the PN junction principle, temperature sensors designed using the threshold voltage of MOS transistors, etc., and more varistors are made using the characteristics of varistors whose resistance changes with temperature. sensor. [0003] Above-mentioned prior art has following shortcoming at least: [0004] It cannot have functions such as temperature detection, over-temperature protection, and over-current protection at the same time. Contents of the invention [0005] The purpose of the present invention is to provide a temperature sensor based on a magnetic tunnel junction device, which can be compatible with CMOS technology, and can have functions such as temperature detection, over-temperature pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/01
CPCG01K7/36B82Y25/00H01L43/00H01F10/3254H01L43/08H10N50/10
Inventor 姜岩峰
Owner NORTH CHINA UNIVERSITY OF TECHNOLOGY
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