Barrier type silicon-based thin film semi-laminated solar cell
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIANGSU UNIV
- Publication Date
- 2013-05-08
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Abstract
Description
technical field
[0001] The invention relates to a silicon-based thin-film solar cell, in particular to a barrier-type silicon-based thin-film semi-stacked solar cell with different doping concentrations and forbidden band widths of each layer. Background technique
[0002] At present, silicon-based solar cells are mainly monocrystalline silicon, polycrystalline silicon, and thin-film silicon solar cells. Thin-film solar cells are mainly single-junction PIN structures and stacked solar cell structures. Among them, single-junction amorphous silicon cells with PIN structures Although it can absorb more solar spectrum, due to the instability of amorphous silicon, the battery has S-W effect, which limits the stability of its performance, and stacked solar cells have been greatly developed. Hydrogenated amorphous silicon cells As the top cell, the microcrystalline silicon amorphous silicon stacked cell with hydrogenated microcrystalline silicon cell as the bottom cell is a hot spo...