Manufacturing method of silicon-on-insulator lateral insulated-gate bipolar transistor (SOI LIGBT) device unit of lateral channel with positive (p) buried layer

Abstract

The invention relates to a manufacturing method of a silicon-on-insulator lateral insulated-gate bipolar transistor (SOI LIGBT) device unit of a lateral channel with a positive (p) buried layer. An SOI LIGBT device which is manufactured by the conventional method is abruptly degraded or even invalid in a high-temperature and large-current environment. In the method provided by the invention, the SOI LIGBT device is manufactured by using an SOI material with a p-buried layer; a reverse bias pn junction which is formed by the p-buried layer with reverse impurity concentration distribution and anegative (n) top-layer semiconductor with forward impurity concentration distribution is used for longitudinal voltage resistance; and the SOI LIGBT device unit of the lateral channel with the p buried layer is manufactured by etching for nine times and oxidation twice. The device unit which is manufactured by the method improves the longitudinal voltage resistance of the device under the condition of reducing the thickness of a buried oxidation layer, reduces a self-heating effect, improves the thermal property of the device and improves the reliability of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a SOI CMOS VLSI process realization method of a lateral channel SOI (silicon on insulating layer) LIGBT (lateral insulated gate bipolar transistor) device unit with a p-buried layer. Background technique [0002] Due to its small size, weight, high operating temperature and strong radiation resistance, low cost and high reliability, SOI LIGBT devices are used as non-contact power electronic switches or power drivers in smart power It is widely used in electronics, high temperature environment power electronics, space power electronics and vehicle power electronics. SOI CMOS VLSI process technology has advantages such as high process maturity, good dielectric isolation performance, simple isolation process, easy three-dimensional integration, easy integration of micro-optical electromechanical and power and radio frequency monolithic systems, and easy improvement of integrati...

AI Technical Summary

Problems solved by technology

Because the thermal conductivity of the oxide layer is very low and the thickness is very large, it brings serious self-heating problems and strict heat dissipation requirements to such high-voltage, high-current, and high-power devices. The device must be installed in the process of use. The heat sink is not conducive to saving resources, saving energy and reducing consumption, and protecting the environment; at the same time, the thin top-layer semiconductor becomes the bottleneck for reducing the on-state resistance of SOI LIGBT devices, which limits the further improvement of device withstand voltage and current capacity density, as well as the improvement of device structure. Seriously hinder the development of device products, technologies and industries