Hydrophilic monomer, hydrophilic photoresist composition, and formation method for resist pattern
A hydrophilic monomer and hydrophilic technology, which is applied in the field of hydrophilic photoresist composition, can solve the problems of increasing the cost of lithography process, costing alkaline developer, etc.
Inactive Publication Date: 2011-09-28
华映视讯(吴江)有限公司 +1
View PDF3 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0012] However, since the traditional photoresist must be equipped with an alkaline chemical solution for the development and cleaning steps, it is a kind of public hazard to the environment, and the use of alkaline developer also increases the cost of the lithography process; therefore, a A novel monomer applicable to a photoresist composition, a photoresist composition containing the monomer, and a method for forming a photoresist pattern are sufficient to solve the cost and environmental hazards of alkaline developers caused by known technologies , it is necessary
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0022] The present invention discloses a hydrophilic monomer represented by the following formula I,
[0023]
[0024] where R 1 Represents n polyoxyethylene groups [-(OC 2 h 4 ) n ], where n is a natural number from 1 to 20; or -(OC 2 h 2 NHC 2 h 2 ) m , where m is a natural number from 1 to 20. R 2 Represents hydrogen (H) or methyl (CH 3 ). In a preferred embodiment, n is a natural number from 1 to 15, and m is a natural number from 1 to 17; in a preferred embodiment of the present invention, n is a natural number from 1 to 10, and m is a natural number from 3 to 15. The hydrophilic monomer of the present invention is suitable for photoresist, and has a hydrophilic functional group, therefore, the hydrophilic monomer of the present invention can be mixed with pure water (H 2 O) role, and dissolved in pure water.
[0025] The present invention is also a hydrophilic resin represented by the following formula II:
[0026]
[0027] where R 3 Represents -CO(C...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a hydrophilic monomer, and a hydrophilic photoresist composition containing the hydrophilic monomer. The hydrophilic photoresist composition further contains a hydrophilic resin, wherein the hydrophilic monomer and the hydrophilic resin respectively contain a hydrophilic functional group which can reacts with hydrone to be dissolved in purified water. The invention further provides a formation method for a resist pattern. The formation method comprises: coating the hydrophilic photoresist composition onto surface of a substrate to form a photoresist layer; therefore, carrying out a step of developing and cleaning by using purified water, such that problems of environmental destructions due to necessary using an alkaline developing solution in widely-known technology is solved, and cost for using alkaline developing agent is reduced, benifit of lithography is improved.
Description
technical field [0001] The present invention relates to a photoresist, more particularly to a hydrophilic monomer, a hydrophilic photoresist composition containing the hydrophilic monomer, and a method for forming a photoresist pattern; The hydrophilic photoresist composition has the property of being able to develop in pure water, and is suitable for pattern conversion, so it can be applied in flat panel display and photolithography process. Background technique [0002] In the development of microelectronics technology, regardless of semiconductor manufacturing process or TFT-LCD manufacturing process, Lithography plays the most critical role, for example, those related to the structure of electronic components, such as: the pattern and impurities of each layer of thin film (Dopants) areas are defined by lithography. The so-called "lithography technology (or light lithography technology)", simply put, in order to completely and accurately copy the designed circuit pattern...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C08G65/00C07C69/54C07C219/20G03F7/00G03F7/004G03F7/027
Inventor 汤逢锦谢文仁陈建廷
Owner 华映视讯(吴江)有限公司