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Wire bonding structure of semiconductor device and wire bonding method

一种引线焊接、半导体的技术，应用在引线焊接结构领域，能够解决不利半导体装置小型化等问题

Active Publication Date: 2011-10-05
ROHM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the increase in the size of the pad portion 97Ba is not conducive to the miniaturization of the entire semiconductor device.

Method used

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  • Wire bonding structure of semiconductor device and wire bonding method
  • Wire bonding structure of semiconductor device and wire bonding method
  • Wire bonding structure of semiconductor device and wire bonding method

Examples

Experimental program
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Embodiment Construction

[0035] Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

[0036] Figure 1 to Figure 12 It is an explanatory diagram showing an example of a wire bonding method using a bonding tool according to the present invention.

[0037] like figure 2 As shown, the welding tool 10 includes: a wedge 1 , a wire guide 2 , a cutter 3 , a supporting body 4 and a horn 5 . The horn 5 holds the wedge 1 , presses the wedge 1 toward the joining object while providing ultrasonic vibrations. The horn 5 is supported by the support main body 4 . In this embodiment, the horn 5 is mounted on the supporting body 4 through an elastic supporting member.

[0038] The wire guide 2 is fixed on the wedge 1 . The lead wire guide device 2 is used to guide the lead wire 6' pulled out from the lead wire reel 65 to the wedge 1, for example. The lead 6' is made of aluminum, for example. Instead of aluminum, the lead 6' may be formed of...

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PUM

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Abstract

A wire bonding structure is provided which includes a wire having a first bonding portion and a second bonding portion. The first bonding portion is bonded to an electrode pad of a semiconductor element, whereas the second bonding portion is bonded to a pad portion of a lead. The first bonding portion includes a front bond portion, a rear bond portion, and an intermediate portion sandwiched between these two bond portions. The front bond portion and the rear bond portion are bonded to the electrode pad more strongly than the intermediate portion is. In the longitudinal direction of the wire, the second bonding portion is smaller than the first bonding portion in bonding length.

Description

technical field [0001] The present invention relates to a wire bonding structure used, for example, in a semiconductor device. The present invention also relates to a semiconductor device including the wire bonding structure. The invention also relates to a wire bonding method and a bonding tool used in the method. Background technique [0002] Figure 15 and Figure 16 An example of a wire bonding method using a conventional bonding tool is shown (for example, refer to JP-A-2006-114649). like Figure 15 As shown, the bonding tool 90 includes: a wedge 91 , a wire guide 92 and a knife 93 . The wedge 91 is supported by a horn (not shown) for providing ultrasonic vibrations. The wire guide 92 is used to guide the wire 96 to the top of the wedge 91 . Under pressure, the wedge 91 applies ultrasonic vibrations to the lead wire 96 sandwiched between its tip and the connection object. Then, the lead wire 96 is bonded to the above-mentioned connection object. Then, the lead wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/00H01L23/49H01L21/607B23K20/10
CPCH01L2224/85181H01L2224/85205H01L2924/01074H01L2224/78313H01L2224/48455H01L24/85H01L2224/48472H01L2924/014H01L2224/78314H01L2924/01029B23K20/005H01L2224/48799H01L2224/45147H01L2924/01013H01L2924/01005H01L2924/01082H01L2924/01033H01L24/45H01L2924/01004H01L23/3121H01L2224/48699H01L2224/4846H01L2924/01006H01L24/78H01L24/48H01L2224/45124H01L2924/01023H01L2224/48247H01L2224/48091H01L2924/00014H01L2924/12032H01L2924/181H01L2924/00012H01L2924/00H01L2224/85399H01L2224/05599
Inventor 椿隆次松冈康文
Owner ROHM CO LTD
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