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Preparation method of patterned zinc oxide film

A zinc oxide thin film and patterning technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high cost, low efficiency, and complicated process procedures, and achieve high repeatability and cheap preparation.

Inactive Publication Date: 2012-10-24
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the most commonly used template making method is electron beam direct writing exposure combined with reactive ion etching, which is costly and inefficient.
More importantly, nanoimprint technology is mainly to transfer the template pattern to the polymer film, and it also needs to use subsequent processes such as etching and evaporation to pattern other metals and semiconductor materials, and the process procedures are more complicated.

Method used

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  • Preparation method of patterned zinc oxide film
  • Preparation method of patterned zinc oxide film
  • Preparation method of patterned zinc oxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A method for preparing a patterned zinc oxide film, comprising the following steps:

[0028] (1) Preparation of colloidal ball template

[0029] a, the preparation of polystyrene ball suspension, polystyrene ball is dissolved in the mixed solvent of water and ethanol, the mass percentage of polystyrene ball in the polystyrene ball suspension is 1%, the mass ratio of water and ethanol 1:1, the diameter of the polystyrene ball is 100nm;

[0030] b. Use a dropper with a rubber tip to absorb the polystyrene ball suspension and drop it onto the glass slide, then place one end of the glass slide in contact with the surface of deionized water at an angle of 20° and slowly penetrate below the water surface. At this time, the PS on the glass slide The suspension spread rapidly on the water surface, and at the same time self-assembled into a single-layer polystyrene film at the gas-liquid interface; The styrene film is transferred to the substrate, and dried at 90°C to obtain a...

Embodiment 2

[0038] A method for preparing a patterned zinc oxide film, comprising the following steps:

[0039] (1) Preparation of colloidal ball template

[0040] a, the preparation of polystyrene ball suspension, polystyrene ball is dissolved in the mixed solvent of water and ethanol, the mass percent of polystyrene ball in the polystyrene ball suspension is 3%, the mass ratio of water and ethanol 1:2, the ball diameter of polystyrene ball is 300nm;

[0041]b. Use a dropper with a rubber tip to absorb the polystyrene ball suspension and drop it onto the glass slide, then place one end of the glass slide in contact with the surface of deionized water at an angle of 25° and slowly penetrate below the water surface. At this time, the PS on the glass slide The suspension spreads rapidly on the water surface, and self-assembles into a single-layer polystyrene film at the gas-liquid interface; The polystyrene film was transferred to the substrate, and dried at 80°C to obtain a colloidal bal...

Embodiment 3

[0049] A method for preparing a patterned zinc oxide film, comprising the following steps:

[0050] (1) Preparation of colloidal ball template

[0051] a, the preparation of polystyrene ball suspension, polystyrene ball is dissolved in the mixed solvent of water and ethanol, the mass percent of polystyrene ball in the polystyrene ball suspension is 5%, the mass ratio of water and ethanol The ratio is 1:3, and the diameter of the polystyrene ball is 500nm;

[0052] b. Use a dropper with a rubber tip to absorb the polystyrene ball suspension and drop it onto the glass slide, then place one end of the glass slide in contact with the deionized water surface at an angle of 30° and slowly penetrate below the water surface. At this time, the PS on the glass slide The suspension spread rapidly on the water surface, and at the same time self-assembled into a single-layer polystyrene film at the gas-liquid interface; The styrene film was transferred to the substrate, and dried at 120°...

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Abstract

The invention belongs to the technical field of nanoprocessing and in particular relates to a method for preparing a patterned zinc oxide nanofilm by a nanoimprint technology. The method mainly comprises the following steps of: preparing a colloidal ball template; preparing a polydimethylsiloxane negative type structure soft template; preparing zinc oxide precursor sol; and preparing the patterned zinc oxide film by the nanoimprint technology. In the method, the templates required by nanoimprint are assembled by a self-assembling technology; the zinc oxide precursor sol serves as a barrier layer; and nanoimprint process parameters are controlled, so that the sol is converted into gel in the impressing process and the patterned zinc oxide film is directly impressed without subsequent etching process. The method is high in repeatability. By the method, the patterned oxide films can be prepared on a large scale and under the conditions of high efficiency and low price.

Description

technical field [0001] The invention belongs to the technical field of nano processing, and in particular relates to a method for preparing patterned zinc oxide nano film by using nano imprinting technology. Background technique [0002] Zinc oxide (ZnO) is a new type of wide-bandgap direct bandgap II-VI semiconductor material, with a bandgap width of 3.37 eV at room temperature and an exciton binding energy as high as 60 meV, which is widely used in the development of high-efficiency light-emitting diodes (LEDs). ), UV detectors and other short-wavelength optoelectronic devices. In the solar cell process, patterned nano-ZnO thin film can improve the light transmittance in the visible light region, and can improve its conductivity through doping. It is an excellent structural material for the solar cell window layer and top electrode. Traditional ZnO thin film preparation methods such as magnetron sputtering and other technologies can only produce thin films with a planar s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/368C04B41/50C03C17/23
Inventor 杜祖亮王洋戴树玺程轲
Owner HENAN UNIVERSITY
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