Fluorescent-powder-free single-chip GaN (gallium nitride)-based LED (light-emitting diode) and manufacturing method thereof
A light-emitting diode and phosphor-free technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency and poor color rendering, and achieve good color rendering, easy preparation, and improved service life.
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Embodiment 1
[0038] White light-emitting diodes with blue light quantum wells, green light quantum wells and red light quantum dots in the epitaxial active region on the sapphire substrate by MOCVD, such as figure 1 , the specific epitaxial growth steps are:
[0039] 1. Put the sapphire substrate prepared for epitaxy into the MOCVD reaction chamber, first degas the sapphire substrate with hydrogen at high temperature, the temperature is 1060°C, and the pressure is 200mbar.
[0040] 2. According to the traditional two-step growth method (“GaN Growth Using GaN Buffer Layer” JAPANESE JOURNAL OF APPLIED PHYSICS PART2-LETTERS Volume 30: 1705-1707), a 30nm GaN buffer layer was epitaxially grown on the sapphire surface.
[0041] 3. Grow n-type GaN on the GaN buffer layer under the conditions of 1050°C and 400mbar, and the dopant is SiH 4 , with a growth thickness of about 4 μm and an electron concentration of 5×10 18 cm -3 .
[0042]4. Epitaxial growth of 5 blue light quantum wells on the n-t...
Embodiment 2
[0050] White light-emitting diodes with blue light quantum wells, green light quantum dots and red light quantum dots in the epitaxial active area on the sapphire substrate by MOCVD, such as figure 2 , the specific epitaxial growth steps are:
[0051] 1. Put the sapphire substrate prepared for epitaxy into the MOCVD reaction chamber. First, the sapphire substrate is degassed with hydrogen at a high temperature at a temperature of 1050° C. and a pressure of 500 mbar.
[0052] 2. According to the two-step growth method described in Embodiment 1, a 20 nm GaN buffer layer is epitaxially grown on the sapphire surface.
[0053] 3. Grow n-type GaN on the GaN buffer layer under the conditions of 1050°C and 400mbar, and the dopant is SiH 4 , with a growth thickness of about 4 μm and an electron concentration of 5×10 18 cm -3 .
[0054] 4. On the n-type GaN bulk material, five unintentionally doped blue light quantum wells are epitaxially grown. The quantum well structure is: the ...
Embodiment 3
[0062] White light-emitting diodes with blue light quantum wells, green light quantum wells and red light quantum dots in the epitaxial active area on SiC substrates by MOCVD, such as figure 1 , the specific epitaxial growth steps are:
[0063] 1. Put the SiC substrate prepared for epitaxy in the MOCVD reaction chamber, first degas the SiC substrate with hydrogen at high temperature, the temperature is 1150°C, and the pressure is 200mbar.
[0064] 2. According to the traditional two-step growth method, a 50nm AlN buffer layer is epitaxially grown on the surface of the SiC substrate.
[0065] 3. Grow n-type GaN on the AlN buffer layer under the conditions of 1050°C and 400mbar, and the dopant is SiH 4 , the growth thickness is about 150nm, and the electron concentration is 5×10 17 cm -3 .
[0066] 4. Epitaxial growth of 7 blue light quantum wells on the n-type GaN bulk material, the quantum well structure is: InGaN with a well of 5nm (In composition 27%), and GaN with a bar...
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