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Autobias photoelectrochemical cell based on p-type silicon photocathode, and preparation method thereof

A photoelectrochemical cell and p-type silicon technology, applied in photosensitive equipment, electrolytic capacitors, circuits, etc., can solve the problems of low light conversion efficiency and the need for noble metal catalysts, and achieve good application prospects, low-temperature preparation, and cost savings. Effect

Inactive Publication Date: 2013-08-07
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

P-type monocrystalline silicon wafers have also been studied as photocathodes, but the light conversion efficiency is still not very high, and they all require noble metal catalysts

Method used

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  • Autobias photoelectrochemical cell based on p-type silicon photocathode, and preparation method thereof
  • Autobias photoelectrochemical cell based on p-type silicon photocathode, and preparation method thereof
  • Autobias photoelectrochemical cell based on p-type silicon photocathode, and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A p(111) monocrystalline silicon wafer with a side length of 2 cm was selected, and firstly ultrasonically cleaned with acetone and absolute ethanol for 10 minutes respectively. Then put in a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 to clean for 10 minutes, then soak in diluted hydrofluoric acid for 3 minutes, and then quickly move into hydrofluoric acid (concentration: 5.0M) and silver nitrate ( Concentration of 0.02M) in the mixed solution for hydrothermal reaction, standing reaction at 5 ° C for 20 minutes. After cooling and taking out, rinse off the loose attachments on the surface with a large amount of deionized water, then immerse in concentrated nitric acid for 2 hours to remove impurity silver, and finally blow dry. On the back of silicon substrate 1 where p-type silicon nanowire array 2 is grown, aluminum film and gold film are successively sputtered to make ohmic electrodes, leaving 0.25cm on the front. 2 The rest of t...

Embodiment 2

[0032] A p(100) monocrystalline silicon wafer with a side length of 2 cm was selected, and firstly ultrasonically cleaned with acetone and absolute ethanol for 10 minutes respectively. Then put in a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 to wash for 10 minutes, then soak in diluted hydrofluoric acid for 3 minutes, and then quickly move into hydrofluoric acid with a concentration of 5.0M and a concentration of 0.02M. The hydrothermal reaction was carried out in a mixed solution of silver nitrate, and the reaction was left to stand at 50° C. for 50 minutes. After cooling and taking out, rinse off the loose attachments on the surface with a large amount of deionized water, then immerse in concentrated nitric acid for 2 hours to remove impurity silver, and finally blow dry. On the back of silicon substrate 1 where p-type silicon nanowire array 2 is grown, aluminum film and gold film are successively sputtered to make ohmic electrodes, leav...

Embodiment 3

[0035] A p(111) monocrystalline silicon wafer with a side length of 2 cm was selected, and firstly ultrasonically cleaned with acetone and absolute ethanol for 10 minutes respectively. Then put in a mixed solution of sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 to wash for 10 minutes, then soak in diluted hydrofluoric acid for 3 minutes, and then quickly move into hydrofluoric acid with a concentration of 5.0M and a concentration of 0.02M. The hydrothermal reaction was carried out in a mixed solution of silver nitrate, and the reaction was left to stand at 50° C. for 60 minutes. After cooling and taking out, rinse off the loose attachments on the surface with a large amount of deionized water, then immerse in concentrated nitric acid for 2 hours to remove impurity silver, and finally blow dry. On the back of silicon substrate 1 where p-type silicon nanowire array 2 is grown, aluminum film and gold film are successively sputtered to make ohmic electrodes, leav...

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Abstract

The invention discloses an autobias photoelectrochemical cell (PEC) based on p-type silicon photocathode, and a preparation method thereof, especially relates to an autobias PEC which can be provided for realizing solar energy conversion and comprises semiconductor one-dimensional nanostructure photoelectrode, and a preparation method thereof. The invention belongs to the field of clean and renewable new energy use and new material preparation. The autobias PEC based on the p-type silicon photocathode comprises a nano-structure photocathode, a nano-structure photoanode, electrolytic solution,conductors and the like, wherein the nano-structure photocathode comprises a p-type silicon substrate and p-type silicon nano-wire arrays. The growth parts prepared through chemical erosion on the silicon substrate are the p-type silicon nano-wire arrays which align regularly and grow perpendicular to the p-type silicon substrate. With the method provided by the present invention, the p-type silicon nano-wire arrays are prepared on a large scale through a low-cost chemical etching method, and then are assembled to a solar hydrogen production autobias PEC which can be provided for realizing the solar energy-hydrogen energy conversion without extra energies.

Description

technical field [0001] The present invention relates to a self-biased photoelectrochemical cell based on a p-type silicon photocathode and a preparation method thereof, in particular to a self-biased photoelectrochemical cell composed of a semiconductor one-dimensional nanostructure photoelectrode that can truly realize solar energy conversion and its preparation The method belongs to the field of clean and renewable new energy utilization and new material preparation. Background technique [0002] The greatest challenge to the development of human society today - energy crisis and environmental pollution. After two industrial revolutions in the 19th and 20th centuries, human beings have entered into a modern society with advanced industry and high civilization. However, the rapid development of industrial society has also led to a large amount of energy consumption. According to estimates, the energy system that the world relies on today, that is, fossil energy (including...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M14/00H01G9/048H01G9/20
Inventor 曹传宝郁强
Owner BEIJING INSTITUTE OF TECHNOLOGYGY