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Ga-Te-based thermoelectric semiconductor with superstructure and preparation method thereof

A thermoelectric semiconductor and superstructure technology, applied in chemical instruments and methods, thermoelectric device junction lead wire materials, self-solids, etc., to achieve the effect of simple process and low cost

Inactive Publication Date: 2012-11-28
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there are few reports on the structure and thermoelectric behavior of Ga-Te-based semiconductors after doping. Therefore, the present invention provides a Ga-Te-based thermoelectric semiconductor with superstructure characteristics after doping and its preparation process.

Method used

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  • Ga-Te-based thermoelectric semiconductor with superstructure and preparation method thereof
  • Ga-Te-based thermoelectric semiconductor with superstructure and preparation method thereof
  • Ga-Te-based thermoelectric semiconductor with superstructure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Replace Ga with Sb element with a mole fraction of 0.1 2 Te 3 Ga element in. First according to the chemical formula Ga 1.9 Sb 0.1 Te 3 Weigh the Ga, Sb, and Te elements with a purity greater than 99.999wt.% and place them in a vacuum quartz tube. The smelting synthesis temperature is 1000-1100° C., and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is cooled to room temperature with the furnace. The ingot is pulverized and ball milled, and the ball milling time is controlled at 5 hours, and the powder after ball milling is formed by discharge plasma spark sintering (SPS). The sintering temperature is 350-550°C, and the sintering pressure is 30-50MPa.

Embodiment 2

[0029] Replace Ga with Sb and Cu with mole fractions of 0.1 and 0.05, respectively 2 Te 3 Ga and Te two elements in. First according to the chemical formula Ga 1.9 Sb 0.1 Cu 0.05 Te 2.95 Ga, Cu, Sb, and Te four elements with a purity greater than 99.999wt.% were weighed and placed in a vacuum quartz tube. The smelting synthesis temperature is 1000-1100° C., and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled in the furnace to 700-900°C, and then quenched in water. The quenched ingot is pulverized and ball milled, and the ball milling time is controlled at 5 hours, and the ball milled powder is formed by discharge plasma spark sintering (SPS). The sintering temperature is 350-550°C, and the sintering pressure is 40-60MPa. The sintered bulk material is annealed in a vacuum environment for 100-400 hours, and the annealing temperature is 300-500°C.

Embodiment 3

[0031] Replace Ga with Sb and Cu with mole fractions of 0.1 and 0.05, respectively 2 Te 3 Ga and Te two elements in. First according to the chemical formula Ga 1.9 Sb 0.1 Cu 0.05 Te 2.95 Ga, Cu, Sb, and Te four elements with a purity greater than 99.999wt.% were weighed and placed in a vacuum quartz tube. The smelting synthesis temperature is 1000-1100° C., and the smelting synthesis time is 24 hours. Shake the tube every 1 hour during the melt to ensure a uniform reaction. After smelting and synthesis, it is slowly cooled in the furnace to 700-900°C, and then quenched in water. The quenched ingot is pulverized and ball milled, and the ball milling time is controlled at 5 hours, and the ball milled powder is formed by discharge plasma spark sintering (SPS). The sintering temperature is 350-550°C, and the sintering pressure is 40-60MPa. The sintered bulk material is annealed in a vacuum environment for 500-900 hours, and the annealing temperature is 300-500°C.

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Abstract

The invention relates to a thermoelectric material, and particularly relates to a Ga-Te-based intermediate-temperate thermoelectric semiconductor with a superstructure and a preparation method thereof. The thermoelectric semiconductor is mainly characterized in that the thermoelectric semiconductor has a following chemical formula of Ga2-xSbxCuyTe3-y, wherein x is more than or equal to 0.05 and less than or equal to 0.25, and y is more than or equal to 0.02 and less than or equal to 0.15. The preparation method of the thermoelectric semiconductor comprises the following steps: putting simple-substance elements Ga, Cu, Sb and Te into a vacuum quartz tube; synthesizing for 20-28 hours at 1000-1100DEG C; after the Ga2-xSbxCuyTe3-y ingot is subjected to furnace cooling to 700-900DEG C, immediately quenching in water; after quenching, smashing, carrying out ball milling, and carrying out spark plasma sintering (SPS) to obtain a block, wherein the sintering temperature is 350-550DEG C and the sintering pressure is 40-60MPa; and annealing for 1200-1600 hours in the vacuum quartz tube at the annealing temperature of 300-500DEG C. The obtained Ga2-xSbxCuyTe3-y has the superstructure; Cu and Sb are used for respectively and equimolarly replacing Ga element and Te element in Ga2Te; and the Ga-Te-based intermediate-temperate thermoelectric semiconductor has the advantages of low cost, environmental friendliness in materials and no noise and is suitable to use as an environmentally-friendly energy material.

Description

technical field [0001] The invention relates to a thermoelectric semiconductor material, which is a Ga-Te-based thermoelectric semiconductor with a superstructure and a preparation method. Background technique [0002] Thermoelectric semiconductor material is a new type of semiconductor functional material that realizes direct mutual conversion of electric energy and thermal energy through the movement of carriers, including electrons or holes. Power generation and refrigeration devices made of thermoelectric materials have the advantages of small size, no pollution, no noise, no wear, good reliability, and long life. In the civilian field, potential applications include: household refrigerators, freezers, cooling of superconducting electronic devices, waste heat power generation, waste heat utilization power supply, and small power supply devices in remote areas. [0003] The comprehensive performance of thermoelectric materials is determined by the dimensionless thermoele...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16C30B29/46C30B29/68C30B1/00
Inventor 崔教林
Owner NINGBO UNIVERSITY OF TECHNOLOGY