Read/write distinguished data storage replacing method based on phase change memory
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- TSINGHUA UNIV
- Publication Date
- 2011-11-23
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Abstract
Description
technical field
[0001] The invention relates to a method for storing and replacing data with read-write distinction based on phase-change memory, and belongs to the technical field of computer system structure. Background technique
[0002] As the number of concurrent processing tasks of the computer system increases, the working set supported by the memory becomes larger and larger. On the other hand, the huge amount of calculation in many application fields has also exacerbated the "storage wall" problem. Existing memory is mainly constructed by dynamic random access memory (DRAM). As the system scale increases, the problems of power consumption and cost become more and more serious. Developing new storage systems with high speed, large storage capacity, low cost and low power consumption has become an important challenge in computer system design.
[0003] Emerging storage technologies include Magnetic Random Access Memory (Magnetic RAM, hereinafter referred to as MRAM)...