Read/write distinguished data storage replacing method based on phase change memory

A technology of data storage and phase-change memory, which is applied in the directions of memory address/allocation/relocation, memory system, and electrical digital data processing, etc. The effect of times

Active Publication Date: 2011-11-23
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as a non-volatile storage, phase change memory has limited erasing times, which is the most fatal problem, and it is also an important problem being solved by the academic and industrial circles.

Method used

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  • Read/write distinguished data storage replacing method based on phase change memory
  • Read/write distinguished data storage replacing method based on phase change memory

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Embodiment Construction

[0019] The read-write distinguishing data storage replacement method based on the phase change memory proposed by the present invention has two different operation processes. The first one is that when each cache block in the computer cache area has a 2-bit wide tag value, the method Include the following steps:

[0020] (1-1) Define the tag value of each cache block whose bit width is 2 in the cache area of ​​the computer to revisit the predicted value of the distance, and the revisited distance predicted value is any one of 0, 1, 2 or 3; each data Through its address mapping, a block corresponds to a data line in the cache area. A data line contains N data blocks, and N depends on the number of group links in the cache area. The search, insertion, update, replacement, etc. of the data block are all performed in the data row corresponding to its address.

[0021] (1-2) When a new data block is inserted into the corresponding data row in the computer cache area, if the new da...

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Abstract

The invention relates to read/write distinguished data storage replacing method based on a phase change memory and belongs to the technical field of computer system structures. The method provided by the invention comprises the following steps: defining the mark value of the M (M=2 or 3) bit width of each cache block as a re-access distance predicted value; in the case of data block replacement, selecting the block with the greatest re-access distance predicted value to replace; when a new data block is inserted and hit, setting the re-access distance predicted value as a different value according to the difference in read/write types. As the re-access distance predicted value assigned to the write access data is relatively small, the write access data is protected preferably in a cache region, and the frequency of replacing the write access data into the phase change memory is reduced. The method provided by the invention is applied to the superior storage layer of the phase change memory, and can be used for effectively reducing write operations on the phase change memory and prolonging the service life of the phase change main memory on the premise of ensuring the overall performance. The method provided by the invention has the characteristics of small storage cost and simplicity in realization.

Description

technical field [0001] The invention relates to a method for storing and replacing data with read-write distinction based on phase-change memory, and belongs to the technical field of computer system structure. Background technique [0002] As the number of concurrent processing tasks of the computer system increases, the working set supported by the memory becomes larger and larger. On the other hand, the huge amount of calculation in many application fields has also exacerbated the "storage wall" problem. Existing memory is mainly constructed by dynamic random access memory (DRAM). As the system scale increases, the problems of power consumption and cost become more and more serious. Developing new storage systems with high speed, large storage capacity, low cost and low power consumption has become an important challenge in computer system design. [0003] Emerging storage technologies include Magnetic Random Access Memory (Magnetic RAM, hereinafter referred to as MRAM)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/12G06F12/128
Inventor 汪东升张熙王海霞胡倩
Owner TSINGHUA UNIV
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