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Heat exchange platform of improved structure for polycrystalline silicon ingot furnace

A technology of polysilicon ingot furnace and heat exchange table, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems that technological improvement has not made a breakthrough, achieve stability, convenient operation, and reduce intermediate The effect of influencing factors

Active Publication Date: 2013-08-14
SHANGYU JINGXIN ELECTROMECHANICAL TECH +1
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  • Abstract
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  • Claims
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Problems solved by technology

Although it has been nearly 10 years since the advent of polysilicon ingot furnaces, the above-mentioned control technology of moving heat insulation cages for radiation cooling is generally used, and no breakthrough has been made in its technical improvement.

Method used

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  • Heat exchange platform of improved structure for polycrystalline silicon ingot furnace
  • Heat exchange platform of improved structure for polycrystalline silicon ingot furnace
  • Heat exchange platform of improved structure for polycrystalline silicon ingot furnace

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Embodiment Construction

[0062] The present invention will be further described below in conjunction with accompanying drawing.

[0063] The improved structure heat exchange table for polysilicon ingot furnace is used to place the crucible of polysilicon ingot furnace and realize heat exchange, usually made of graphite. The heat exchange platform is provided with a gas inlet and a gas outlet, and a cooling air channel is arranged inside the heat exchange platform, and is connected with the aforementioned gas inlet and gas outlet.

[0064] Usually, based on the processing method, graphite material cannot be processed into internal channels with changing shapes without cutting. Therefore, the commonly used method is to divide it into a layered structure, slot the two layers according to the designed channel shape, and then put the two layered structures together to obtain heat exchange table products with various shapes and structures.

[0065] As a special case, the heat exchange platform does not rea...

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Abstract

The invention relates to polycrystalline silicon ingot furnace equipment, and aims to provide a heat exchange platform of an improved structure for a polycrystalline silicon ingot furnace. The heat exchange platform is used for holding a polycrystalline silicon ingot furnace crucible and realizing heat exchange, and is provided with a gas inlet and a gas outlet; and the interior of the heat exchange platform is provided with a cooling gas channel, and is connected with the gas inlet and the gas outlet. Compared with the radiation cooling and the water-cooling type cooling technologies, the heat exchange platform disclosed by the invention is strong in control capacity and high in industrial controllability when being used for gas refrigeration; and furthermore, because the gas enters the heat exchange platform uniformly, the overall temperature of the heat exchange board is uniform, so that the uniform nucleation of a silicon melt at the bottom of the crucible is facilitated, and the temperature reduction speed at the bottom of the crucible in the crystal growth process can be precisely controlled.

Description

technical field [0001] The invention relates to polysilicon ingot furnace equipment, in particular to a heat exchange platform with an improved structure for the polysilicon ingot furnace. Background technique [0002] Polysilicon ingot casting furnace is the main production equipment of polysilicon in the photovoltaic industry at present. Its function is to turn polysilicon into a polysilicon ingot with a certain crystal growth direction after several stages of melting, directional crystallization, annealing and cooling according to the set process. The environment required for the polycrystalline silicon ingot casting process is the thermal field of the polycrystalline ingot casting furnace. By rationally designing the power distribution of the heater in the thermal field, the position and thickness distribution of the heat insulating material, the crystal growth direction of the final polycrystalline silicon ingot can be changed. The working principle of the device is as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B11/00C30B29/06
Inventor 傅林坚石刚叶欣曹建伟邱敏秀
Owner SHANGYU JINGXIN ELECTROMECHANICAL TECH
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