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Method for detecting ion implantation machine

A technology of ion implantation and detection method, which is applied in the direction of discharge tubes, electrical components, circuits, etc.

Active Publication Date: 2013-06-19
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0021] However, in the prior art, the number of cycles of steps 101 to 105 is usually 5 times, from Figure 2 It can be seen that the increasing speed of the second ion implantation dose corresponding to the first three times is relatively fast. In some cases, it is possible that when the machine is qualified, the difference between the second ion implantation dose obtained three times and the standard value of the ion implantation dose may not all be within the preset threshold range, which reduces the ion implantation machine’s performance. Detection accuracy

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  • Method for detecting ion implantation machine
  • Method for detecting ion implantation machine
  • Method for detecting ion implantation machine

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[0043] In order to make the object, technical solution and advantages of the present invention clearer, the solutions of the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0044] The core idea of ​​the present invention is: before machine detection, a certain dose of ions is injected into the control plate in advance, so that the control plate enters a steady state in advance, and when the machine test is performed subsequently, the second ion implantation of the control plate can be reduced. The increasing speed of the dose improves the accuracy of the machine detection. In addition, when performing the machine detection, the ion implantation can be repeated many times, and the second ion implantation dose can be obtained, which can also improve the accuracy of the machine detection.

[0045] image 3 A flowchart of a detection method for an ion implantation machine provided by the invention. like ima...

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Abstract

The invention discloses a method for detecting an ion implantation machine. Before the machine is detected, a certain amount of ions are implanted into a control wafer in advance so as to enable the control wafer to enter a stable state in advance, and when the machine is detected subsequently, the gradual increase speed on the amount of second ions implanted into the control wafer can be decreased, so that the precision in detecting the machine is increased.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a detection method for an ion implantation machine. Background technique [0002] With the wide application of electronic equipment, the manufacturing process of semiconductors has been developed rapidly. In the manufacturing process of semiconductors, an ion implantation process is involved. The ion implantation dose is an important parameter in the ion implantation process. Usually, the ion implantation machine emits ion beams to the wafer according to the preset ion implantation dose for ion implantation. However, in practical applications, due to the long service life of the machine Or other reasons such as machine failure, the ion implantation dose provided by the ion implantation machine to the wafer has drifted compared with the preset ion implantation dose standard value. [0003] In order to overcome the drift problem of the ion implantation dose, it is necessary to frequentl...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/317
Inventor 陈勇
Owner SEMICON MFG INT (SHANGHAI) CORP