Method for obtaining space image of non-ideal lithography system based on Abbe vector imaging model

A technology of lithography system and imaging model, which is applied in the direction of microlithography exposure equipment, photolithography process exposure device, etc., can solve the problems of inapplicable resolution enhancement technology optimization method and no analytical expression given

Active Publication Date: 2012-01-18
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

However, the above method does not give an analytical expression in matrix form between the spatial image of the lithography system and the mask pattern under t

Method used

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  • Method for obtaining space image of non-ideal lithography system based on Abbe vector imaging model
  • Method for obtaining space image of non-ideal lithography system based on Abbe vector imaging model
  • Method for obtaining space image of non-ideal lithography system based on Abbe vector imaging model

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Embodiment

[0137] Such as Figure 5 As shown, the simulation uses the aberration obtained by ray tracing at a certain off-axis field of view point of the projection system designed in the laboratory (because in the field of numerical calculation, a two-dimensional figure is essentially a matrix. Here it is actually Draw the two-dimensional wave surface diagram corresponding to the scalar aberration matrix, and the value of each coordinate point on the diagram corresponds to the element value of the matrix one by one). 501 is a schematic diagram of the scalar aberration of the field of view point, and 502-509 are the eight Jones pupil components of the polarization aberration of the field of view point. 502 and 503 are respectively J xx The real and imaginary parts of . 504 and 505 are J respectively xy The real and imaginary parts of . 506 and 507 are J respectively yx The real and imaginary parts of . 508 and 509 are J respectively yy The real and imaginary parts of .

[0138] S...

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Abstract

The invention discloses a method for obtaining a space image of a non-ideal lithography system based on an Abbe vector imaging model. The specific steps comprise: rasterizing a mask pattern M into N * N sub-regions; rasterizing a light source surface into a plurality of point light sources according to the shape of a partially coherent light source, and showing coordinates of the point light source corresponding to each grid area with the coordinates (xs, ys) of the central point; calculating a space image I (Alphas, Betas) on a wafer in the non-ideal lithography system during illumination ofeach point light source; and superimposing the space image I (Alphas, Betas) corresponding to each point light source according to the Abbe method, and obtaining the space image I on the wafer in thenon-ideal lithography system during illumination of the partially coherent light source. The light source surface can be rasterized into multiple point light sources, and the functions of analyzing scalar aberrations and polarization aberrations of lithographic projection systems and defocus parameters of lithography systems can also be achieved. Therefore, the space image obtained in the method has high accuracy, and the method can be effectively applied in research on methods for optimization of resolution enhancement techniques.

Description

technical field [0001] The invention relates to a method for obtaining an aerial image of a non-ideal photolithography system based on an Abbe (Abbe) vector imaging model, and belongs to the technical field of photolithography resolution enhancement. Background technique [0002] The current large-scale integrated circuits are generally manufactured using photolithography systems. The lithography system is mainly divided into four parts: illumination system (including light source and condenser), mask, projection system and wafer. The light emitted by the light source is focused by the condenser and then enters the mask, and the opening part of the mask transmits light; after passing through the mask, the light is incident on the wafer coated with photoresist through the projection system, so that the mask pattern is copied on the wafer. [0003] As lithography technology enters the node of 45nm and below, the critical dimension of the circuit has been far smaller than the ...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 李艳秋董立松马旭
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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