IGBT (insulated gate bipolar transistor) drive circuit
A technology of bipolar transistors and driving circuits, which is applied in emergency protection circuit devices, electrical components, electronic switches, etc., and can solve the problem of limited driving ability of the photoelectric isolator PC929
Inactive Publication Date: 2012-01-18
SHENZHEN INVT ELECTRIC
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[0003] However, due to the limited driving capability of the opto-isolator PC929 itself, the above-mentioned IGBT driving circuit can only be applied to small-capacity IGBT driving
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[0021] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
[0022] See figure 1 , figure 1 The structure diagram of an insulated gate bipolar transistor driving circuit provided by the present invention. Such as figure 1 As shown, the driving circuit may include:
[0023] Photoelectric isolator PC929-100, its pins 12 and 13 are electrically connected to the positive pole of the constant voltage power supply, and pins 10 and 14 are electrically connected to the negative pole of the constant voltage power supply;
[0024] A voltage div...
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The invention provides an IGBT (insulated gate bipolar transistor) drive circuit, comprising an optoelectronic isolator and a bleeder circuit, wherein pins (12 and 13) of the optoelectronic isolator PC929 are connected with the positive pole of a constant-voltage source and pins (10 and 14) of the optoelectronic isolator PC929 are connected with the negative pole of the constant-voltage source; two ends of the bleeder circuit are respectively connected with the positive pole and negative pole of the constant-voltage source; a pin (11) of the optoelectronic isolator PC929 is connected with a grid of a base (Q1) and a grid of a base (Q2) by a current-limiting resistor; a collector of the triode (Q1) is connected with the positive pole of the constant-voltage source and a collector of the triode (Q2) is connected with the negative pole of the constant-voltage source; signals output by an emitter of the triode (Q1) are taken as drive signals which are used for switching on the IGBT, and signals output by an emitter of the triode (Q2) are taken as drive signals which are used for switching off the IGBT; and a protective circuit is respectively connected with the positive pole and negative pole of the constant-voltage source and used for receiving collector-emitter voltages (Vce) of the IGBT, and when the Vce reaches the preset value, high levels are input into the optoelectronic isolator by one pin (9) of the optoelectronic isolator. The IGBT drive circuit is suitable for high-capacity IGBT drive and has a Vce protection function.
Description
Technical field [0001] The invention relates to the field of power electronics, in particular to an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) drive circuit. Background technique [0002] In power electronic devices such as frequency converters, lighting circuits, traction drives, and uninterruptible power systems (UPS), IGBT is the main power switching device, and the reliability of its work (including drive and protection) will directly affect the entire Because of the reliability of the device, there are many different drive circuits in the IGBT drive industry. Among them, a typical IGBT drive circuit is to use the output of the photoelectric isolator PC929 to directly drive the IGBT, that is, the output of the photoelectric isolator PC929 is directly input to the IGBT gate for IGBT drive. [0003] However, due to the limited drive capability of the opto-isolator PC929, the above-mentioned IGBT drive circuit can only be applied to small-capacity...
Claims
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IPC IPC(8): H03K17/567H02H7/20
Inventor 吴建安
Owner SHENZHEN INVT ELECTRIC