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Iii nitride crystal substrate, and light-emitting device and method of its manufacture

A manufacturing method and technology for light-emitting devices, which are applied in semiconductor/solid-state device manufacturing, chemical instruments and methods, semiconductor devices, etc., and can solve problems such as lack of clear instructions

Inactive Publication Date: 2012-01-25
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, Patent Application Publication No. 2007-161536 does not clearly describe the correlation between the substrate dislocation density and the characteristics of semiconductor devices other than electronic devices (such as light-emitting devices)

Method used

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  • Iii nitride crystal substrate, and light-emitting device and method of its manufacture
  • Iii nitride crystal substrate, and light-emitting device and method of its manufacture
  • Iii nitride crystal substrate, and light-emitting device and method of its manufacture

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Embodiment approach 1

[0020] The Group III nitride crystal substrate of the present invention has a surface area of ​​10 cm 2 In the above main surface, the total dislocation density is 1×10 in the main region of the main surface except for the peripheral edge region within 5mm from the outer periphery to the outer periphery of the main surface. 4 cm -2 to 3×10 6 cm -2 , and the ratio of the screw dislocation density to the total dislocation density is 0.5 or more.

[0021] In this embodiment mode, the Group III nitride crystal substrate has a surface area of ​​10 cm 2 Above the main face, this enables the manufacture of large light emitting devices as well as mass production of light emitting devices.

[0022] In the group III nitride crystal substrate of the present embodiment, in the main region of the principal surface except for the peripheral edge region within 5 mm from the periphery thereof to the periphery, the total dislocation density is 1×10 4 cm -2 to 3×10 6 cm -2 , the ratio o...

Embodiment approach 2

[0053] refer to Figure 5 , the light-emitting device of the present invention includes: the group III nitride crystal substrate 100 in Embodiment 1, and at least a single layer group III nitride layer 130 formed on the group III nitride crystal substrate 100 . The light-emitting device in this embodiment mode includes at least a single-layer III-nitride layer formed on a III-nitride crystal substrate in which the total dislocation density is 1×10 4 cm -2 and 3×10 6 cm -2 Between , the ratio of the screw dislocation density to the total dislocation density is above 0.5. Therefore, the device has high luminous intensity, such as Image 6 shown.

[0054] Specifically, refer to Figure 5 , in the light-emitting device of this embodiment mode, as at least a single-layer III-nitride layer 130, on a 1 mm×1 mm×500 μm thick GaN substrate (III-nitride crystal substrate 100, wherein the total dislocation density is at 1 ×10 4 cm -2 and 3×10 6 cm -2 Between, the...

Embodiment approach 3

[0056] refer to Figure 5 , an embodiment of the light-emitting device manufacturing method of the present invention includes: the step of preparing the III-nitride crystal substrate 100 in Embodiment 1, and forming at least a single-layer III-nitride crystal substrate 100 on the III-nitride crystal substrate 100 Nitride layer 130 step. According to the light-emitting device manufacturing method in this embodiment mode, in the Group III nitride crystal substrate 100 (wherein the total dislocation density is 1×10 4 cm -2 and 3×10 6 cm -2 Between, the ratio of the screw dislocation density to the total dislocation density is 0.5 or more), at least a single group III nitride layer is formed, which can manufacture a light emitting device with high luminous intensity.

[0057] The light emitting device manufacturing method in this embodiment mode has the step of preparing group III nitride crystal substrate 100 in Embodiment Mode 1. FIG. There is no particular limitat...

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Abstract

Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1x104 cm-2 to 3x106 cm-2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.

Description

[0001] The patent application of the present invention is based on the divisional application of the Chinese patent application No. 200810178828.0 filed on December 1, 2008, entitled "Group III nitride crystal substrate, light-emitting device and manufacturing method thereof". technical field [0002] The present invention relates to group III nitride crystal substrates suitable for use in light emitting devices, light emitting devices and their manufacturing methods. Background technique [0003] Group III nitride crystal substrates have found great utility as substrates for various semiconductor devices including optoelectronic device elements and electronic devices. For the improvement of the characteristics of various semiconductor devices using group III nitride crystal substrates, the substrates are required to have low dislocation density and favorable crystallinity. Also, from the viewpoint of the utilization efficiency of the Group III nitride crystal substrate, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38H01L33/00
CPCH01L21/02389H01L21/02658H01L21/0254H01L33/025H01L21/0262H01L33/0075H01L29/32H01L21/0243H01L21/02625C30B29/406H01L21/02458C30B23/02C30B19/02C30B25/02H01L21/20
Inventor 藤原伸介吉田浩章
Owner SUMITOMO ELECTRIC IND LTD