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Determining optimal reference voltages for progressive reads in flash memory systems

A memory system, reference voltage technology, applied in static memory, read-only memory, digital memory information and other directions, can solve the problem that the threshold voltage cannot be directly read

Active Publication Date: 2014-08-13
MARVELL ASIA PTE LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Threshold voltage V T cannot be read directly

Method used

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  • Determining optimal reference voltages for progressive reads in flash memory systems
  • Determining optimal reference voltages for progressive reads in flash memory systems
  • Determining optimal reference voltages for progressive reads in flash memory systems

Examples

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Embodiment Construction

[0040] The following description is merely illustrative in nature, and in no way intended to limit the disclosure, its application, or uses. For purposes of clarity, the same reference numbers will be used in the drawings to identify similar elements. As used herein, the phrase "at least one of A, B, and C" should be understood as a logical (A or B or C) using a non-exclusive logical OR. It should be understood that steps within a method may be executed in different order without altering the principles of the present disclosure.

[0041] As used herein, the term "module" may refer to, may be part of, or may include the following items: application specific integrated circuits (ASICs); electronic circuits; combinational logic circuits; field programmable gate arrays (FPGAs); A processor (shared, dedicated, or group) executing code; other suitable components providing the described functionality; or a combination of some or all of the above (such as in a system on a chip). Th...

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PUM

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Abstract

A system including a reference voltage module to select a first reference voltage between a first threshold voltage corresponding to a first state of a memory cell and a second threshold voltage corresponding to a second state of the memory cell, a second reference voltage less than the first reference voltage, and a third reference voltage greater than the first reference voltage. The system includes a read module to perform a first read operation to determine a state of the memory cell based on the first reference voltage, and in response to a first failure to decode data read from the memory cell in the first read operation, perform a second read operation to determine the state based on the second reference voltage and a third read operation to determine the state based on the third reference voltage.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application No. 61 / 362,253, filed July 7, 2010. The disclosure of the aforementioned application is hereby incorporated by reference in its entirety. technical field [0003] The present disclosure relates to semiconductor memory systems, and more particularly, to the determination of optimal reference voltages for progressive reads in flash memory systems. Background technique [0004] The background description provided herein is for the purpose of generally presenting the context of the disclosure. None of the work of the presently named inventors, to the extent described in this Background section, is admitted to be prior art to the present disclosure, nor is it expressly or implicitly admitted to be prior art to the present disclosure with respect to the description that is not prior art at the time of filing. [0005] Memory integrated circuits (ICs) includ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/26
CPCG11C11/5642G11C16/26
Inventor S·K·奇拉帕加里X·杨
Owner MARVELL ASIA PTE LTD