Unlock instant, AI-driven research and patent intelligence for your innovation.
Preparation method and structure of one-film and multipurpose masked texturing solar cell
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A solar cell and mask technology, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large equipment investment and high equipment requirements, and achieve the effect of simple process, low cost and easy control
Active Publication Date: 2013-10-30
TRINA SOLAR CO LTD
View PDF6 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0002] At present, the crystalline silicon solar cells produced by the world's major solar companies are all P-type silicon substrates. In order to further improve the efficiency of solar cells and reduce costs, SE (selective emission junction) and back passivation are widely used in the industry to prepare high-efficiency cells. , but these two technologies have high requirements for equipment and a large investment in equipment
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0047] Taking a P-type Czochralski monocrystalline silicon wafer with a crystal orientation of (100) and a doping concentration of 1Ωcm as an example, to further illustrate the present invention, the steps are as follows:
[0048] a) Both sides of the silicon wafer are polished;
[0049] b) Prepare a P-type back field with BBr3 liquid boron diffusion source, the diffusion temperature is 930°C, the time is 50min, and the sheet resistance is 30ohm / Sq;
[0050] c) Etch the P-type emitter junction on the back and remove the BSG at the same time with the post-cleaning machine of RENA company;
[0051] d) growing a SiO2 thin film by thermal oxidation as a mask layer with a thickness of 300nm;
[0052] e) re-depositing a 90nm SiNx film on the back;
[0053] f) etching the SiO2 film on the non-emitter surface with a corrosive slurry;
[0054] g) use conventional alkali texturing solution to make texturing on the front side, and SiO2 film / SiNx film as the mask on the back;
[0055]...
Embodiment 2
[0067] Taking an n-type Czochralski monocrystalline silicon wafer with a crystal orientation of (100) and a doping concentration of 1Ωcm as an example, to further illustrate the present invention, the steps are as follows:
[0068] a) Both sides of the silicon wafer are polished;
[0069] b) N-type back field is prepared by POCl3 liquid phosphorus diffusion source, the diffusion temperature is 850°C, the time is 50min, and the sheet resistance is 30ohm / Sq;
[0070] c) Etch the N-type back field on the back and remove the PSG at the same time with the post-cleaning machine of RENA company;
[0071] d) growing a SiO2 thin film mask layer with a thickness of 300nm by thermal oxidation;
[0072] e) re-depositing a 90nm SiN film on the back;
[0073] f) etching the SiO2 mask layer on the non-emitter surface with a corrosive slurry;
[0074] g) use conventional alkali texturing solution to make texturing on the front side, and use SiO2 / SiNx as the mask on the back side;
[0075]...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Property
Measurement
Unit
thickness
aaaaa
aaaaa
thickness
aaaaa
aaaaa
refractive index
aaaaa
aaaaa
Login to View More
Abstract
The invention relates to the technical field of manufacturing of photovoltaic cells, in particular to a preparation method and a structure of a one-film and multipurpose masked texturing solar cell. The preparation method comprises the following steps of: taking a P-type Czochralski monocrystalline silicon as a substrate, manufacturing an SiO2 thin film on a P-type back surface field, taking the SiO2 thin film as a positive alkali solution-textured mask, diffusing a phosphorus source after the completion of texturing, and preparing P-N nodes on the front surface; forbidding to completely remove the SiO2 thin film and an SiNx thin film after the diffusion of the phosphorus source, and retaining the SiO2 thin film of 10-150 nm as a passivation film on the back surface; or taking an N-type Czochralski monocrystalline silicon as a substrate, manufacturing a SiO2 thin film on an N-type back surface field, taking the SiO2 thin film as a positive alkali solution-textured and boron source-diffused mask; and forbidding to completely remove after the diffusion of a phosphorus source, and retaining the SiO2 thin film of 10-150 nm as a passivation film on the back surface. The invention has the beneficial effects that compared with the prior process method, the process is simple, the control is easy, the cost is low, and the photoelectric conversion efficiency is high.
Description
technical field [0001] The invention relates to the technical field of photovoltaic cell manufacturing, in particular to a preparation method and structure of a multi-purpose masked textured solar cell. Background technique [0002] At present, the crystalline silicon solar cells produced by the world's major solar companies are all P-type silicon substrates. In order to further improve the efficiency of solar cells and reduce costs, SE (selective emission junction) and back passivation are widely used in the industry to prepare high-efficiency cells. , but these two technologies require high equipment and require a large investment in equipment. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a P-type silicon solar cell process method with simple process, low cost and suitable for large-scale production. [0004] The solution adopted by the present invention to solve the technical problem is: a method for prepa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More