PIN (Positive Intrinsic Negative) diode and manufacturing method thereof
A technology of a PIN diode and a manufacturing method, applied to the PIN diode and its manufacturing field, can solve the problems of high cost, high reverse isolation, and the PIN diode cannot be integrated with CMOS in the same chip at the same time.
Active Publication Date: 2014-12-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0005] 3. Reverse isolation should be as high as possible
However, because it is difficult to achieve different epitaxial thicknesses in the conventional BiCOMS process, conventional PIN diodes with different insertion loss and isolation requirements cannot be integrated with CMOS on the same chip at the same time, and usually only in the form of discrete devices.
Therefore, conventional PIN diodes need to be externally connected to the PCB board, which is bulky. Different products need to be purchased for different insertion loss and reverse isolation requirements, and the cost is high.
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[0050] The first embodiment of the PIN diode of the present invention is as Figure 9 As shown, it includes a substrate 1, an N-type cathode 11, an intrinsic semiconductor 12, a P-type anode 13, an isolation region 14, and an N-type extrinsic base region cathode 111. A disc-shaped N-type cathode 11 is formed above the substrate 1. An intrinsic semiconductor 12 is grown above the middle part of the sheet-shaped N-type cathode 11, and an annular N-type extrinsic base cathode coaxial with the disk-shaped N-type cathode 11 is formed above the peripheral part of the sheet-shaped N-type cathode 11. 111, the periphery of the intrinsic semiconductor 12 close to the end of the N-type cathode 11 is in contact with the annular N-type extrinsic base region cathode 111; A disc-shaped P-type anode 13 coaxial with the disc-shaped N-type cathode 11, the intrinsic semiconductor 12 is away from the periphery of the N-type cathode 11 end and between the periphery of the disc-shaped P-type anode ...
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The invention discloses a PIN (Positive Intrinsic Negative) diode which is provided with a wafer-shaped N-type cathode. An intrinsic semiconductor is arranged above the middle part of the wafer-shaped N-type cathode; and a ring-shaped N-type outside base area cathode is formed above the peripheral part of the wafer-shaped N-type cathode; and a wafer-shaped P-type anode is formed above the middle area of the intrinsic semiconductor far away from the end of the N-type cathode. The invention also discloses another PIN diode which is provided with a ring-shaped N-type cathode; an intrinsic semiconductor is arranged above the middle part of the ring-shaped N-type cathode; a ring-shaped N-type outside base area cathode is formed above the peripheral part of the ring-shaped N-type cathode; and a wafer-shaped P-type anode is formed above the middle area of the intrinsic semiconductor far away from the end of the N-type cathode. The invention has the beneficial effects that each PIN diode has low on resistance, and a manufacturing process of the PIN diode can be compatible with a BICMOS (Bipolar Complementary Metallic - Oxide Semiconductor) process. The invention also discloses a manufacturing method of the PIN diodes.
Description
technical field [0001] The invention relates to semiconductor technology, in particular to a PIN diode and its manufacturing method. Background technique [0002] Typical applications for RF electronic switches are wireless transceivers. wireless transceivers such as figure 1 As shown, it usually consists of the following four parts: power amplifier (PA), low noise amplifier (LNA), radio frequency electronic switch, and logic control circuit. The power amplifier and the low noise amplifier are connected to the antenna through a radio frequency electronic switch to transmit and receive radio frequency signals. Since the signal transmitted from the power amplifier to the antenna must be strong enough, the RF electronic switch connected to it needs to have as low a forward conduction loss as possible. For low noise amplifiers, the signal from the power amplifier will come in from the reverse-biased (closed) RF electronic switch to form signal crosstalk, and the RF electronic...
Claims
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IPC IPC(8): H01L29/868H01L29/06H01L21/329
Inventor 周正良徐炯刘冬华
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP