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Phosphor and luminescence device

A technology of light-emitting devices and phosphors, which is applied in the direction of light-emitting materials, semiconductor devices, electrical components, etc., and can solve problems such as the decrease of luminance and color rendering, poor heat resistance of crystals, and unpopularity of commercial use.

Active Publication Date: 2015-03-25
DENKA CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Sr 2 Si 5 N 8 : Due to the poor heat resistance of the crystal itself, the Eu phosphor has the disadvantages of reduced luminance and color rendering when used for a long time; although the Sialon phosphor itself has no durability problem, the luminance of the phosphor is obviously insufficient, and it is not commercially available. not popular

Method used

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  • Phosphor and luminescence device
  • Phosphor and luminescence device
  • Phosphor and luminescence device

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0070] Prepare the required calcium metal (3N7), strontium metal (4N), magnesium metal (2N) and barium metal (2N), pulverize them and place them in a pure nitrogen atmosphere to directly sinter them to form nitrides. The reaction conditions are 750℃. , 700°C, 600°C, and 700°C for 24 hours. Calcium nitride (Ca 3 N 2 ), strontium nitride (Sr 3 N 2 ), magnesium nitride (Mg 3 N 2 ) and barium nitride (Ba 3 N 2 )compound of.

Embodiment 1

[0072] Preparation of Ca synthesized in Synthesis Example 1 3 N 2 , Sr 3 N 2 , Mg 3 N 2 and AlN(3N), Si 3 N 4 (3N), Eu 2 O 3 (4N), according to Ca 3 N 2 Take 0.445 / 3 mole, Sr 3 N 2 Take 0.542 / 3 mole, Mg 3 N 2 Take 0.005 / 3 mole, take 1 mole of AlN, Si 3 N 4 Take 1 / 3 mole, Eu 2 O 3 Each raw material powder was weighed at a ratio of 0.008 / 2 mol, and mixed using a mortar in a glove box under a nitrogen atmosphere. The molar ratio of each element in the raw material mixed powder is shown in Table 1. The mixed powder of the aforementioned raw materials is placed in a boron nitride crucible, and the crucible is placed in a high-temperature furnace. The atmosphere in the furnace is an environment of high-purity nitrogen, and the gas flow rate is 80 liters / min. To 1500°C, after sintering at 1500°C for 12 hours, drop to room temperature at a cooling rate of 10°C / min, and go through the steps of pulverization, ball milling, secondary washing with water, filtration, dry...

Embodiment 2～5

[0073] Examples 2 to 5, Comparative Example 1

[0074] The molar ratio of each element in the raw material mixed powder is adjusted as in Table 1, and the remaining steps are the same as in Example 1. The rest of the physical property test results are listed in Table 1-A. It can be seen from Table 1-A that under the same chromaticity, the phosphor containing calcium, strontium and the content of magnesium and / or barium within the specific range of the present invention has a higher luminous brightness than the content of magnesium and / or barium in the present invention. For phosphors outside the specific range of the invention, the brightness difference can reach up to 8%. The source of barium element in Tables 1 to 6 is barium nitride (Ba 3 N 2 ).

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Abstract

The invention provides phosphor which comprises a component with a composition as shown in formula (I), wherein M is selected from a group composed of beryllium and zinc; A is selected from a group composed of aluminium, gallium, indium, scandium, yttrium, lanthanum, gadolinium, and lutetium; B is selected from a group composed of silicon, germanium, tin, titanium, zirconium, and hafnium ; 0<p<1, 0<q<1, 0<=m<1, 0<=t<=0.3, 0.00001<=r<=0.1, a=1, 0.8<=b<=1.2, 2.7<=n<=3.1; the phosphor comprises 20-1500 ppm of magnesium and / or 40-5000 ppm of barium. Through the adjustment of the ratios of the elements forming the phosphor and through the cooperative control of the concentrations of magnesium and barium forming the phosphor within a certain range, the phosphor is obtained with high luminance in a range of 600-680 nm; in addition, the invention also provides a luminescence device with high luminance. CapSrqMm-Aa-Bb-Ot-Nn:Eur (I).

Description

technical field [0001] The present invention relates to a nitride phosphor used in lighting units such as displays, backlights for liquid crystals, fluorescent lamps, and light-emitting diodes. The present invention relates to the composition of the nitride phosphor and a light-emitting device using the phosphor. Background technique [0002] In recent years, light-emitting devices using semiconductors have been widely used, especially light-emitting diodes have been successfully developed. Compared with conventional light-emitting devices such as cold cathode lamps and incandescent lamps, this light-emitting device has high luminous efficiency, small size, and low power consumption. The advantages of electricity and low cost, so it can be used as a variety of light sources. The semiconductor light-emitting device includes a semiconductor light-emitting element and a phosphor. The phosphor can absorb and convert the light emitted by the semiconductor light-emitting element,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/64C09K11/80H01L33/50
Inventor 庄渊仁温正雄林志龙
Owner DENKA CO LTD
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