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Crystalline silicon type solar cell and process for manufacture thereof

一种太阳能电池、制造方法的技术，应用在电路、电气元件、光伏发电等方向，能够解决电极剥落等问题，达到抑制翘曲、高光电转换特性、难以发生的剥落的效果

Active Publication Date: 2014-08-20
KANEKA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The collector is easy to peel off from the transparent conductive layer, and the peeling of the collector is a fatal flaw in the work of solar cells

Method used

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  • Crystalline silicon type solar cell and process for manufacture thereof
  • Crystalline silicon type solar cell and process for manufacture thereof
  • Crystalline silicon type solar cell and process for manufacture thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0115] As Example 1, made according to the present invention, figure 1 A schematic cross-sectional view of a crystalline silicon-based solar cell represented. The crystalline silicon-based solar cell of this embodiment is a heterojunction solar cell, and the n-type crystalline silicon substrate 1 has concavo-convex structures on both sides. The i-type amorphous silicon layer 2 / p-type amorphous silicon layer 3 / zinc oxide layer 4 are formed on the light incident surface of the n-type crystalline silicon substrate 1 . A collector electrode 5 is formed on the zinc oxide layer 4 . On the other hand, i-type amorphous silicon layer 6 / n-type amorphous silicon layer 7a / n-type microcrystalline silicon layer 7b / indium oxide (ITO) layer 8 are formed on the back side of n-type crystalline silicon substrate 1 . Ag metal electrode layer 10 is formed on ITO layer 8 . The crystalline silicon-based solar cell of Example 1 was produced as follows.

[0116] An n-type crystalline silicon sub...

Embodiment 2

[0137] In Example 2, solar cells were produced and evaluated in the same manner as in Example 1, but differed from Example 1 only in that the film formation time of the transparent conductive layer on the light incident side was 27 minutes.

Embodiment 3

[0139] In Example 3, a solar cell was produced and evaluated in the same manner as in Example 1, but differed from Example 1 only in that the film formation time of the transparent conductive layer on the light incident side was 18 minutes.

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Abstract

An object of the present invention is to provide a heterojunction solar cell that suppresses warpage of the substrate and has high photoelectric conversion efficiency even when the thickness of the silicon crystal substrate is small. The crystalline silicon substrate 1 has a thickness of 50 μm to 200 μm, and has a concavo-convex structure at least on the main surface on the light incident side. The light incident side surface of the light incident side transparent conductive layer 4 has a concavo-convex structure. Preferably, the height difference of the concave-convex structure on the surface of the transparent conductive layer 4 on the light incident side is smaller than the level difference of the concave-convex structure on the light incident surface side of the crystalline silicon substrate 1, and the interval of the concave-convex structure on the surface of the transparent conductive layer 4 on the light incident side is smaller than that of the crystalline silicon substrate. 1. The interval of the concave-convex structure on the light incident surface side. It is preferable that the transparent conductive layer 4 on the light incident side has a zinc oxide layer with a thickness of 300nm to 2500nm, and the zinc oxide layer contains a hexagonal layer preferentially oriented in the (10-10) plane, (11-20) plane or (10-11) plane direction. Crystalline zinc oxide.

Description

technical field [0001] The present invention relates to a crystalline silicon-based solar cell having a heterojunction on the surface of a semiconductor substrate. Background technique [0002] A crystalline silicon-based solar cell using a crystalline silicon substrate has high photoelectric conversion efficiency, and has been widely used as a photovoltaic power generation system. Among them, a crystalline silicon-based solar cell in which an amorphous silicon-based thin film having a band gap different from that of single-crystal silicon is formed on the surface of a crystalline silicon substrate to form a diffusion potential is called a heterojunction solar cell. A heterojunction solar cell with a thin intrinsic (i-type) amorphous silicon layer between the conductive amorphous silicon-based thin film and crystalline silicon for forming a diffusion potential is known to be the form of crystalline silicon-based solar cells with the highest conversion efficiency one. In th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/036H01L31/18
CPCH01L31/022483H01L31/02363H01L31/0747Y02E10/50
Inventor 足立大辅吉河训太山本宪治
Owner KANEKA CORP