Apparatus for VHF impedance match tuning

Abstract

Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.

Description

technical field [0001] Embodiments of the invention relate generally to plasma enhanced process chambers, and in particular to impedance matching networks for processes using very high frequency (VHF) power sources. Background technique [0002] Plasma enhanced substrate process chambers are widely used in the manufacture of integrated components. In some plasma-enhanced substrate processing chambers, multiple radio frequencies (RF) are used to form and control the plasma. Each generator is connected to the substrate process chamber via a matching network. For processes using high frequency (HF), matching networks typically use lumped elements, such as commercially available capacitors. [0003] However, for processes using VHF frequencies above 100 MHZ, conventional lumped components such as capacitors are impractical because the value of such components is not easily realized. At these frequencies, multiple spreading elements based on transmission lines are typically us...

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Problems solved by technology

However, RF transmission lines are very long at these frequencies, and thus components based on full-wavelength or quarter-wavelength are thus also very large

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