Simulation construction method and simulation construction device of back-stage structure of memory technology

Abstract

The invention relates to a method for simulating and constructing a back-stage structure of a memory process, and meanwhile, a simulating and constructing device is established for the simulating and constructing method. By dividing the second dielectric layer in the basic structure into at least four sub-dielectric layers, the bottom surface of the second grid coincides with the bottom surface of the second sub-dielectric layer, and the bottom surface of the third grid coincides with the fourth sub-dielectric layer , thereby forming a simulation structure in which the second gate and the third gate are "suspended" on the second dielectric layer, which avoids violating the requirement of the simulation structure that the same layer of dielectric must be the same material, and can faithfully reflect the characteristics of each gate. Accurate position, so that accurate output characteristic parameters can be obtained, and the authenticity and accuracy of simulation results can be improved.

Description

technical field [0001] The present invention relates to a simulation construction method and a simulation construction device, in particular to a simulation construction method and a simulation construction device for a simulation construction method of a back-stage structure of a memory process. Background technique [0002] Memory (Memory) is a memory device in a computer system used to store programs and data. All information in the computer, including input raw data, computer programs, intermediate running results and final running results are stored in the memory. It deposits and retrieves information according to the location specified by the controller. With the memory, the computer has the memory function to ensure normal work. Storage can be divided into main storage (internal memory) and auxiliary storage (external storage) according to the purpose, and there are also classification methods for external storage and internal storage. External storage is usually m...

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Problems solved by technology

The construction method in the prior art can only form the first dielectric layer 21, the second dielectric layer 22, and the control gate 24 on the semiconductor substrate 20, and the control gate 24 is formed on the semiconductor substrate 24, that is, "stand". On the semiconductor substrate 20, it is impossible to build a structure in which the logic gate and the memory gate are suspended in the first dielectric layer and the second dielectric layer during the construction simulation process, so that the logic gate and the memory gate cannot be detected during the simulation process. The actual output parameter information such as the capacitance between the gates (PIP, poly-insulator-poly), the capacitance between the memory gate and the adjacent metal layer (PPS, poly=poly-silicon) leads to inaccurate simulation results

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