Solid-state imaging device, semiconductor device, manufacturing methods thereof, and electronic apparatus

A technology for a camera device and a manufacturing method, which is applied in the fields of semiconductor/solid-state device manufacturing, semiconductor device, semiconductor/solid-state device components, etc., can solve the problems of difficulty in applying wafer-to-wafer bonding, increased cost, and difficulty in miniaturizing components, and achieves The effect of improving image quality, reducing the effects of electromagnetic waves or crosstalk

Active Publication Date: 2012-07-04
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this structure, there arise problems such as an increase in manufacturing steps and an increase in cost, problems such as difficulty in miniaturization of components, or problems such as difficulty in applying wafer-to-wafer bonding

Method used

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  • Solid-state imaging device, semiconductor device, manufacturing methods thereof, and electronic apparatus
  • Solid-state imaging device, semiconductor device, manufacturing methods thereof, and electronic apparatus
  • Solid-state imaging device, semiconductor device, manufacturing methods thereof, and electronic apparatus

Examples

Experimental program
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Effect test

no. 1 example

[0050] 1. First Embodiment: Backside Illuminated MOS Solid-State Imaging Device

[0051] 1-1. Overall structure

[0052] 1-2. Sectional structure of main parts

[0053] 1-3. Manufacturing method

[0054] 2. Second Embodiment: Backside Illuminated MOS Solid-State Imaging Device

no. 3 example

[0055] 3. Third Embodiment: Backside Illuminated MOS Solid-State Imaging Device

no. 4 example

[0056] 4. Fourth Embodiment: Backside Illuminated MOS Solid-State Imaging Device

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PUM

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Abstract

The invention relates to a solid-state imaging device, a semiconductor device, manufacturing methods thereof, and an electronic apparatus. The solid-state imaging device includes an imaging element and a logic element. The imaging element includes a first semiconductor substrate, a first wiring layer, and a first metal layer, in which a pixel region which is a light sensing surface is formed. The logic element includes a second semiconductor substrate, a second wiring layer, and a second metal layer, in which a signal processing circuit that processes a pixel signal obtained at the pixel region is formed. The logic element is laminated to the imaging element so that the first metal layer and the second metal layer are bonded to each other, and the first metal layer and the second metal layer are formed on a region excluding a region in which a penetrating electrode layer penetrating a bonding surface of the imaging element and the logic element is formed.

Description

[0001] Cross References to Related Applications [0002] The present application contains subject matter related to the disclosure of Japanese Priority Patent Application JP 2010-241491 filed in the Japan Patent Office on Oct. 27, 2010, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a semiconductor device such as a solid-state imaging device and a method of manufacturing the same, and an electronic device such as a camera including the solid-state imaging device. Background technique [0004] In recent years, due to the high integration of LSI (Large Scale Integration), miniaturization and multilayering of internal wiring have been developed. However, the high cost of semiconductor manufacturing devices due to miniaturization greatly affects the cost of LSIs. In addition, a method of mixing and arranging logic circuits, memories, imaging devices, and the like on a single chip is also performed. How...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L23/552H04N5/374
CPCH01L27/1464H01L27/14627H01L27/14621H01L23/552H01L25/0657H01L27/14634H05K9/00H01L27/14636H01L2924/0002H01L2225/06513H01L2225/06541H01L21/76898H01L27/1469H01L23/481H01L2924/00H01L27/146
Inventor 前田圭一
Owner SONY CORP
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