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Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate

A polishing composition and chemical-mechanical technology, which can be applied to polishing compositions containing abrasives, chemical instruments and methods, and other chemical processes, etc., can solve the problems of high cost, increased abrasive dosage, and expensive abrasives.

Inactive Publication Date: 2012-07-11
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Unfortunately, abrasives are expensive and increasing the amount of abrasive can lead to prohibitive costs
At the same time, high concentrations of abrasi

Method used

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  • Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
  • Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
  • Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate

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Abstract

A stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate. The chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; a diquaternary substance according to formula (I); a derivative of guanidine according to formula (II); and, optionally, a quaternary ammonium salt. Also, provided is a method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing the chemical mechanical polishing composition of the present invention; providing a chemical mechanical polishing pad; creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition has a pH of 2 to 6.

Description

technical field [0001] The present invention generally relates to the field of chemical mechanical polishing. In particular, the present invention relates to a stable, concentratable chemical mechanical polishing composition and a method of chemical mechanical polishing of semiconductor materials and, more particularly, to a , ILD) and shallow trench isolation (shallow trench isolation, STI) method of chemical mechanical polishing of the dielectric layer of the semiconductor structure. Background technique [0002] Modern integrated circuits are fabricated through complex processes in which electronic circuits consisting of semiconductor devices are integrated on small semiconductor structures. Conventional semiconductor devices formed on semiconductor structures include capacitors, resistors, transistors, conductors, diodes, and the like. In the manufacture of advanced integrated circuits, a large number of such semiconductor devices are formed on a single semiconductor s...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L21/311B24B37/24
CPCC09G1/02H01L21/31053C09G1/04C09K3/1463H01L21/3212
Inventor 刘振东郭毅K-A·K·雷迪张广云
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC