Method for manufacturing strain semiconductor device structure
A device structure and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of PMOS transistor saturation current decrease, and achieve the goal of preventing the increase of Miller capacitance, suppressing adverse effects, and suppressing saturation current Effect
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[0035] In the following description, a lot of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described.
[0036] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to illustrate how the present invention makes a strained semiconductor device structure. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the semiconductor field. The preferred embodiments of the present invention are described in detail as follows. However, in addition to these detailed descriptions, the present invention may also have other embodiments.
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