Preparation method for silica-based 850nm laser with active area grown in selected area
A selective area growth, active area technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of lack of silicon-based light source, affecting the quality of epitaxial layers, and the problem of silicon-based luminescence has not been well solved. The effect of optimizing growth rate, reducing defects, and reducing growth temperature
Active Publication Date: 2013-04-17
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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However, for the development of Optoelectronic Integrated Circuit (OEIC), the biggest problem is the lack of silicon-based light sources, and the problem of silicon-based light emission has not been well resolved.
These dislocations and antiphase domain boundaries will extend all the way to the surface of the epitaxial layer, seriously affecting the quality of the epitaxial layer
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[0026] see Figure 1 to Figure 6 , the present invention provides a method for preparing a silicon-based 850nm laser using selective growth of an active region, comprising the following steps:
[0027] Step 1: Using the MOCVD method at a pressure of 100 mBar, the first buffer layer 2, the second buffer layer 3, the lower cladding layer 4 and the first lower confinement layer 5 are sequentially grown on the cleaned silicon substrate 1, and the first and second confinement layers are grown by PECVD. Silicon oxide layer 6; wherein, the silicon substrate 1 is n-type low-resistance (001) silicon, biased 4°, the material of the first buffer layer 2 and the second buffer layer 3 is GaAs, and the material of the upper cladding layer 4 for Al 0.5 Ga 0.5 As, the three layers adopt SiH 4 doping; the material of the first lower confinement layer 5 is Al 0.3 Ga 0.7 As; grow the first buffer layer 2, using tert-butyl dihydrogen arsenic and triethyl gallium as raw materials, and the te...
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The invention discloses a preparation method for a silica-based 850nm laser with an active area grown in a selected area. The method comprises the following steps of: sequentially growing a first buffering layer, a second buffering layer, a lower wrapping layer, a first lower limit layer and a first silicon dioxide layer on a silicon substrate by a low-pressure metal organic chemical vapor deposition (MOCVD) method; etching the first silicon dioxide layer to form a groove by the method of combining dry etching and wet etching; sequentially growing a second limit layer, a lower waveguide layer, a multi-quantum well active area and an upper waveguide layer in the groove; growing a combining layer, an upper limit layer, a first upper wrapping layer and a grating layer on the upper waveguide layer and the first silicon dioxide layer; etching the grating layer to form a grating; extending the grating layer after the grating is etched on the grating layer to form a second upper wrapping layer and a contact layer; carving ridge strips on the second upper wrapping layer and the contact layer; growing second silicon dioxide layers on the second upper wrapping layer, the contact layer, and the two sides of the ridge strips; forming an electrode window in the contact layer; sputtering a titanium platinum electrode; and thinning the back surface of the silicon substrate, evaporating a gold germanium nickel electrode, annealing and thus finishing the preparation of the apparatus.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a silicon-based 850nm laser using selective growth of an active region. Background technique [0002] As the basis of microelectronic technology, silicon material is the most widely studied semiconductor material; the maturity of silicon processing technology is much higher than that of III-V compound semiconductor materials. However, for the development of Optoelectronic Integrated Circuit (OEIC), the biggest problem is the lack of silicon-based light sources, and the problem of silicon-based light emission has not been well resolved. Considering the mature development of GaAs and InP lasers and their incompatibility with standard circuit technology, the preparation of silicon-based III-V compound semiconductor lasers is a feasible solution to the problem of silicon-based optical interconnection. As one of the wavelengths for optical fiber communic...
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IPC IPC(8): H01S5/343
Inventor 周旭亮于红艳潘教青王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI