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micromechanical resonator

A micromechanical resonator and resonator technology, applied in the directions of instruments, microstructure technology, electrical solid devices, etc., can solve problems such as damage to resonance performance, and achieve the effect of reducing manufacturing tolerances

Active Publication Date: 2016-03-16
TEKNOLOGIAN TUTKIMUSKESKUS VTT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This compromises resonance performance compared to a pure single crystal resonator

Method used

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Embodiment Construction

[0044] according to Figure 1 to Figure 4 , the invention relates to micromechanical structures in which a resonator 3 is suspended to a support structure 1 by means of anchors 10 . In a typical embodiment of the invention, the support structure 1 is a silicon device layer of an SOI (silicon on insulator) wafer. The dimensions and suspension of the resonator 3 are such that when the resonator 3 is excited by a corresponding electrical signal, the resonator 3 will move at a specific frequency f 0 vibration. The typical length of a beam resonator is 320 μm and its typical height is 20 μm. Excitation can be done capacitively by electrodes 5 formed on the resonator 3 and on the substrate, or alternatively, by Figure 2a or Figure 4 The piezoelectric structure is completed.

[0045] Electrical signals may be conducted to the structure through electrodes or by making the entire structure conductive to the electrical signal. Typical materials in resonators are Si for conductiv...

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Abstract

The invention relates to a micromechanical resonator comprising: a substrate (1) of a first material (2); a resonator (3) suspended to a support structure (1), the resonator (3) having at least partly the same material as the support structure same material (2), and formed to resonate at a specific frequency f0; a coupling for initiating, maintaining, and coupling the resonance of the resonator (3) to an external circuit (6) The connection device (5); and the resonator (3) includes a second material (4), the thermal properties of the second material (4) are different from the thermal properties of the first material (2). According to the invention, the resonator (3) comprises a second material (4) concentrated in a specific position of said resonator (3).

Description

technical field [0001] The present invention relates to micromechanical resonators. Background technique [0002] Thermal drift remains a major hurdle preventing silicon MEMS resonators from entering the quartz crystal oscillator market. This can be achieved by using materials such as amorphous SiO 2 To replace part of the resonance volume to achieve drift compensation. This impairs resonance performance compared to a pure single crystal resonator. [0003] Traditionally, by using a temperature compensating surround around the base silicon material (typically SiO 2 ), or alternatively, by using SiO 2 As part of a structure that is substantially uniformly distributed throughout the complete structure, problems associated with temperature drift of micromechanical resonators are resolved. For example, this technique is done in the publication "Temperature compensation in silicon-based microelectromechanical resonators (temperature compensation in silicon-based microelectro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/02H03H3/007H03H3/013B81B7/00B81B3/00
CPCB81B3/0081B81B2201/0271H03H3/0076H03H9/02259H03H9/02338H03H9/02448H03H9/2436H03H9/2452H03H9/2463H03H2003/027H03H2003/0407H03H2009/02496H03H2009/02503H03H2009/02511H03H2009/241H03H2009/2442
Inventor 阿尔内·奥亚图奥马斯·彭萨拉约翰纳·梅尔塔乌什
Owner TEKNOLOGIAN TUTKIMUSKESKUS VTT
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