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Analysis method for evaluating service life and reliability of power VMOS (Vertical Metal Oxide Semiconductor) tube

An analysis method and reliability technology, applied in the field of evaluating the life and reliability of power VMOS transistors problems such as bursting

Inactive Publication Date: 2012-07-18
BEIHANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In practical applications, faults such as fuse burning, damping resistor burst, VMOSFET breakdown burst, no output, abnormal output, stage structure, and moving coil damage occur from time to time

Method used

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  • Analysis method for evaluating service life and reliability of power VMOS (Vertical Metal Oxide Semiconductor) tube
  • Analysis method for evaluating service life and reliability of power VMOS (Vertical Metal Oxide Semiconductor) tube
  • Analysis method for evaluating service life and reliability of power VMOS (Vertical Metal Oxide Semiconductor) tube

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Embodiment Construction

[0037] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0038] An analysis method for evaluating the service life and reliability of the power VMOS tube provided by the invention is based on the simulation of the device. This method obtains the waveforms of its various parameters through fault-free simulation and parameter degradation simulation of the common power VMOS tube H-bridge drive circuit in practical applications, and obtains the cause of power VMOS tube failure through graphics combined with specific analysis, using mathematical principles Estimate the reliability and life of power VMOS tubes, and draw more accurate conclusions and solutions.

[0039] See Figure 13 , the present invention is an analysis method for evaluating power VMOS tube life and reliability, the method is specifically realized through the following steps:

[0040] Step 1: Model the power VMOS transistor and establish an H-bridge simulati...

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Abstract

The invention discloses an analysis method for evaluating service life and reliability of a power VMOS (Vertical Metal Oxide Semiconductor) tube, which comprises the following four steps: step 1. creating a model for the power VMOS tube, and creating an H bridge artificial circuit; step 2. performing non-failure emulation on the H bridge; step 3. performing degradation emulation on the threshold voltage of the H bridge circuit; and step 4. comprehensively analyzing to obtain a conclusion in actual application. The analysis method disclosed by the invention emulates the common H bridge drive circuit of the power VMOS tube in actual application, analyzes the degradation drift of the threshold value, and analyzes and calculates on the parameters of the power VMOS tube through a mathematical principle to obtain the conclusion. The analysis method has a scientific conception and a novel method. The analysis method has good application value and brilliant application prospect in the technical field of security tests of power semiconductor components.

Description

technical field [0001] The invention relates to an analysis method for evaluating the service life and reliability of a power VMOS tube. In particular, it relates to a method for analyzing and evaluating the degradation failure, reliability and service life of a power VMOS tube. The invention belongs to the technical field of safety testing of power semiconductor devices. Background technique [0002] Power semiconductor devices play an irreplaceable role in the power amplifiers of aviation airborne electronic equipment and vibration systems, and in power conversion fields such as locomotive traction, wind power generation, AC motor speed regulation, and photovoltaic power generation. Because power devices usually work in high-stress environments such as high voltage, high current, high temperature, and high frequency, the problems of their life and reliability are particularly prominent. The lifespan and reliability of power devices have become a technical bottleneck that...

Claims

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Application Information

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IPC IPC(8): G01R31/26
Inventor 王香芬付桂翠高成黄姣英
Owner BEIHANG UNIV
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