Preparation method of polycrystal Si films through Ge low-temperature induced crystallization

A low-temperature induction, polycrystalline silicon film technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of high substrate requirements, small grain size of polycrystalline Si film, and high crystallization temperature, To achieve the effect of simple process

Inactive Publication Date: 2012-07-25
YUNNAN NORMAL UNIV
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its high crystallization temperature, the energy consumption of thin film preparation is high; secondly, the high growth temperature has high requirements on the substrate, and it is impossible to prepare polycrystalline Si thin films on ordinary glass substrates

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of polycrystal Si films through Ge low-temperature induced crystallization
  • Preparation method of polycrystal Si films through Ge low-temperature induced crystallization
  • Preparation method of polycrystal Si films through Ge low-temperature induced crystallization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A preparation method of GE low -temperature induced crystal polycrystalline Si film, which is implemented by the following steps,

[0029] A) 200 ° C grows a 400nm GE landfill layer on the substrate:

[0030] (1) Single crystal Si substrate with a crystal index of 400 passes through acetone ultrasound for 10 minutes, water -free ethanol ultrasound was cleaned for 20 minutes, removed with high -purity nitrogen dried in the magnetic sputtering room with high purity nitrogen;Set the target spacing of the GE target to 80 mm, and the target spacing of the SI target is 60mm;

[0031] (2) The real vacancy of this background is better than 4.0 × 10 -4 After PA, the purity of the passing of 99.999%is high purity;

[0032] (3) By regulating the flow of the gas, the pressure of the growth room work is 2.0Pa, and the substrate temperature is 200 ° C;

[0033] (4) After the substrate temperature and the interior pressure of the studio are stable, the DC power supply of the GE target is ...

Embodiment 2

[0044] A preparation method of GE low -temperature induced crystal polycrystalline Si film, which is implemented by the following steps,

[0045] A) 30 ° C grows a 200nm GE landfill layer on the substrate:

[0046] (1) The substrate with a crystal index of 150 is cleaned by acetone ultrasound for 10 minutes, and the water -free ethanol ultrasound was cleaned for 20 minutes.The target spacing is set to 83 mm, and the target spacing of the SI target is 80mm;

[0047] (2) The real vacancy of this background is better than 4.0 × 10 -4 After PA, the purity of the passing of 99.999%is high purity;

[0048] (3) By regulating the flow of the gas, the pressure of the growth room work is 2.0Pa, and the substrate temperature is 300 ° C;

[0049] (4) After the substrate temperature and the interior pressure of the studio are stable, the DC power supply of the GE target is adjusted to 100 watts, and the GE landment layer is started;

[0050] (5) After 30 minutes of sputtering in the GE target,...

Embodiment 3

[0057] A preparation method of GE low -temperature induced crystal polycrystalline Si film, which is implemented by the following steps,

[0058] A) 500 ° C grows a layer of 500nm GE landfill layer on the substrate:

[0059] (1) Single crystal Si substrate with a crystal index of 500 passes through acetone ultrasound for 10 minutes, water -free ethanol ultrasound was cleaned for 20 minutes, removed with high -purity nitrogen dried in the magnetic sputtering room with high purity nitrogen;Set the target spacing of the GE target to 75 mm, and the target spacing of the SI target is 55mm;

[0060] (2) The real vacancy of this background is better than 4.0 × 10 -4 After PA, the purity of the passing of 99.999%is high purity;

[0061] (3) By regulating the flow of the air, the pressure of the growth room work is 2.0Pa, and the substrate temperature is 500 ° C;

[0062] (4) After the substrate temperature and the interior pressure of the studio are stable, the DC power supply of the GE t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a preparation method of polycrystal Si films through Ge low-temperature induced crystallization and belongs to the field of semiconductor film materials. The method is implemented by adopting the following steps that: A), a layer of 200 to 500nm Ge filling and burying layer grows on a substrate at 30 DEG C to 500 DEG C; B), an amorphous Si layer grows on the Ge filling and burying layer at 30 DEG C to 500 DEG C; C) the amorphous Si films with the Ge filling and burying layer are sealed in a quartz glass tube at the vacuum degree being 1*10<-2> to 9*10<-2>Pa, the quartz glass tube is placed in a muffle furnace to be subjected to annealing for at least 2 hours at 600 DEG C, and the polycrystal Si films can be obtained. The polycrystal Si films are prepared at low temperature, the process is simple, and the method belongs to the crystallization method practically used for large-scale industrial production of polycrystal Si film materials.

Description

Technical field [0001] The present invention involves a preparation method of GE low temperature induced crystal polycrystalline SI film, which is the field of semiconductor film material. Background technique [0002] The polycrystalline Si thin film also has the advantages of single crystal SI high migration rate, light stability, and non -crystal SI low -cost preparation. It has widespread application prospects in the film solar battery, thin film transistor (TFT), and microelectronics integrated circuits.The existing metal -induced crystallization technology uses a combination of amorphous Si and Ni, AL, CU and other metals to reduce its crystallization temperature and achieve low temperature crystalization.To achieve crystallization, the prepared film has the advantages of high uniformity of polycrystalline SI film and low cost. [0003] For example, in the patent (200910244845.4), the multi -layer thin film made of the substrate included on the substrate, including the non ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/35C23C14/06C23C14/58
Inventor 邓书康康昆勇孙启利申兰先郝瑞亭杨培志李明
Owner YUNNAN NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap