Tunneling field effect transistor with multi-doping pocket structure and manufacturing method for tunneling field effect transistor
A tunneling field effect and transistor technology, which is applied in semiconductor/solid-state device manufacturing, diodes, semiconductor devices, etc., can solve the problems of increasing the difficulty of device realization, optimize device performance, reduce tunneling barrier, and reduce subthreshold slope Effect
Active Publication Date: 2014-04-30
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
Because the doping pocket is required to be very thin, this increases the difficulty of device realization and poses challenges to the process
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[0040] Fig. 2 is an embodiment of the manufacturing method of the Tunneling Field Effect Transistor disclosed in the present invention, wherein Fig. 2 (a) is a sectional view of the device along the channel length direction, Fig. 2 (b) is a top view of the device, Fig. 2 (c) is a cross-sectional view of the device along the AA' direction in Fig. 2(b). The device has three electrodes in total: a drain electrode 210, a gate electrode 211 and a source electrode 212, which is a three-terminal device. The device includes a source region 203, a drain region 208, a gate stack region, a first doped pocket 204, a second doped pocket 205, a third doped pocket 202, a substrate 201, and a second insulating layer 209, on the semiconductor substrate On the bottom 201 , between the source region 203 and the drain region 208 , a channel region 213 is formed by removing the region outside the first doped pocket 204 and the second doped pocket 205 . Wherein, the gate stack region includes a fi...
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The invention discloses a tunneling field effect transistor with a multi-doping pocket structure and a manufacturing method for the tunneling field effect transistor. The tunneling field effect transistor has three doping pockets, wherein the doping types of a first doping pocket (204) and a second doping pocket (205) are the same as that of a source region (203); and the doping type of a third doping pocket (202) is opposite to that of the source region (203), and the third doping pocket (202) is positioned between the two doping pockets and the source region. The three doping pockets aim to exhaust the third doping pocket between the first and second doping pockets and the source region to strengthen an electric field at a tunneling junction at a source end and decrease a tunneling width, so that the driving current of the transistor is improved, a sub-threshold slope is decreased, and performance is improved. The performance of a device can be continuously optimized by controlling the doping characteristics of the three doping pockets.
Description
technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a tunneling field effect transistor with a multi-doped pocket structure and a preparation method thereof. The tunneling field effect transistor has a large driving current and a small subthreshold slope, and is suitable for low voltage and low power consumption applications. Background technique [0002] Tunneling Field Effect Transistor has received extensive attention. It is a new type of low-power device. Compared with MOSFET, its advantage is that it can reduce subthreshold leakage, and the subthreshold slope can break through the limit of kT / q. It shows great potential in consumer applications. However, the driving current of silicon tunneling field effect transistors in the current planar process is small, and its driving current is several orders of magnitude lower than that of MOSFETs, which makes the circuit performance of its applications insu...
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IPC IPC(8): H01L29/772H01L29/06H01L21/335
CPCH01L29/66356H01L29/7391
Inventor 黄如邱颖鑫詹瞻
Owner SEMICON MFG INT (SHANGHAI) CORP