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Method using simple substance iodine as catalyst to grow one-dimensional nanometer array zinc oxide photoelectric film in situ

A photoelectric thin film and in-situ growth technology, applied in the field of material chemistry, to achieve the effects of shortened reaction time, high particle size uniformity, and cheap raw materials

Inactive Publication Date: 2014-05-07
XUCHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The problem to be solved by the present invention is: overcome the reliance on surfactants, cumbersome processing steps, poisonous substances in the reactants, and unsatisfactory products in the current preparation of ZnO crystal methods. Disadvantages such as purity and complicated process

Method used

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  • Method using simple substance iodine as catalyst to grow one-dimensional nanometer array zinc oxide photoelectric film in situ
  • Method using simple substance iodine as catalyst to grow one-dimensional nanometer array zinc oxide photoelectric film in situ
  • Method using simple substance iodine as catalyst to grow one-dimensional nanometer array zinc oxide photoelectric film in situ

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] 1. Preparatory work: Analytical pure zinc flakes 1 ( 1.5cm long , 0.5cm wide, 0.15~0.20mm thick) flattened and soaked in 0.6mol / L dilute nitric acid for 1 minute, then cleaned with an ultrasonic cleaner for 3 minutes, then soaked in absolute ethanol for use. Wash the polytetrafluoroethylene reactor (volume 28mL) with tap water and distilled water three times respectively, dry it and set it aside; prepare 0.5500mol / L NaOH solution for use;

[0045] 2. Reaction step: put the treated metal zinc foil horizontally into the reactor treated in step 1, add 20mL of 0.5500mol / L NaOH solution, then add 0.10g Iodine powder is placed in the reaction kettle to avoid direct contact with zinc flakes. The reaction kettle was placed in an electric heating constant temperature blast drying oven, React at 160°C for 12 hours ;

[0046] 3. Post-processing: After the reaction, the product was washed with absolute ethanol for 3 times and then dried at room temperature to obtain a zinc o...

Embodiment 2

[0048] 1. Preparatory work: put another analytically pure zinc sheet 2 ( 1.5cm long , 0.5cm wide, 0.15~0.25mm thick) flattened, soaked in dilute nitric acid with a concentration of 0.6mol / L for 1 minute, cleaned with ultrasonic waves for 3 minutes, and then soaked in absolute ethanol for use. The polytetrafluoroethylene reactor (28mL) was washed three times with tap water and distilled water successively, and dried before use. configuration 0.2500mol / L The NaOH solution stand-by;

[0049] 2. Reaction step: put the treated metal zinc foil flatly into the reaction kettle treated in reaction step 1, add 20mL of 0.2500mol / L NaOH solution, then add 0.10g Iodine powder is placed in the reaction kettle to avoid direct contact with zinc flakes. The reaction kettle was placed in an electric heating constant temperature blast drying oven, React at 160°C for 12 hours ;

[0050] 3, aftertreatment: with embodiment 1. The product is uniform white, and its microstructure is a one-...

Embodiment 3

[0052] 1, preparatory work: with embodiment 2;

[0053] 2. Reaction step: put the treated metal zinc foil flatly into the reaction kettle treated in reaction step 1, add 20mL concentration of 0.5000mol / L NaOH solution, then add 0.10g Iodine powder is placed in the reaction kettle to avoid direct contact with zinc flakes. The reaction kettle was placed in an electric heating constant temperature blast drying oven, React at 160°C for 12 hours ;

[0054] 3, aftertreatment: with embodiment 1. The product is uniform white, and its microstructure is a one-dimensional array of nanocrystals observed under a scanning electron microscope. Scanning electron micrographs see Figure 11 . Transmission electron micrographs see Figure 12 , 13 , XRD pattern see Figure 14 .

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Abstract

Provided is a method using simple substance iodine as a catalyst to grow a one-dimensional nanometer array zinc oxide photoelectric film in situ. The method comprises placing a metal zinc base material with the clean surface at the bottom of a container, adding sodium hydroxide solution, then adding single substance iodine powder, preventing the single substance iodine powder from being directly contacted with zinc sheets, reacting for 12h at the temperature of 160 DEG C, growing the zinc oxide photoelectric film of a one-dimensional nanometer array, washing products for 3 times with absolute ethyl alcohol and drying at the room temperature. The metal zinc base material with the clean surface is formed by placing metal zinc in dilute nitric acid of 0.6mol / L to be soaked for 1min, then washing the metal zinc in absolute ethyl alcohol for 3min in ultrasonic mode and socking the metal zinc in absolute ethyl alcohol to be standby. The container is a stainless steel reaction kettle with a Teflon inner container, and the concentration of the iodine powder is 2.0-10.0g / L. The obtained zinc oxide photoelectric film is even and compact in surface, high in purity, uniform in particle diameter and large in length-diameter ratio. The raw material is low in price, free of poison, free of follow-up purification, environmentally-friendly, capable of being prepared in large scale and favorable for industrialized production.

Description

Technical field: [0001] The invention belongs to the technical field of material chemistry, and in particular relates to a chemical method for in-situ growth of a one-dimensional nano-array zinc oxide photoelectric film material. Background technique: [0002] Zinc oxide (ZnO) is an important wide band gap compound semiconductor material. The band gap at room temperature is 3.37eV (corresponding to the wavelength of ultraviolet light), and the exciton binding energy is 60meV, which is conducive to the realization of efficient laser emission. The source of the material Rich, with low price, non-toxic and other advantages. Nanoscale (1~100nm) zinc oxide has the characteristics of small size, large specific surface area, and easy preparation in aqueous solution. It has broad applications in optical materials, gas-sensitive materials, electrode materials, active catalytic materials, magnetic materials, and bactericidal materials. Application prospect. ZnO nanostructured film...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y40/00
Inventor 郑直李志莹雷岩葛素香法文君张艳鸽李艳巧黄晚霞
Owner XUCHANG UNIV