Compound semiconductor device and method for manufacturing the same
A semiconductor and compound technology, applied in the field of manufacturing compound semiconductor devices, can solve problems such as difficult growth of Si crystals, poor thermal expansion coefficient, warping or cracks in composite substrates, etc.
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no. 1 approach
[0032] First, the first embodiment will be described. Figure 1A , 1B , 1C, 1D are schematic diagrams showing the structure of the GaN-based HEMT (compound semiconductor device) according to the first embodiment.
[0033] In the first embodiment, if Figure 1A As shown, an electron transport layer 2 is formed on a substrate 1 , and an electron supply layer 3 is formed on the electron transport layer 2 . Further, a gate electrode 4g, a source electrode 4s, and a drain electrode 4d are formed on the electron supply layer 3 such that the gate electrode 4g is sandwiched between the source electrode 4s and the drain electrode 4d.
[0034] In this embodiment, if Figure 1B As shown, on the surface of the substrate 1, a region 1a having a large thermal expansion coefficient and a region 1b having a small thermal expansion coefficient, which contains a substance having a larger thermal expansion coefficient than the substance constituting the electron transport layer 2, exist in a mi...
no. 2 approach
[0042] Next, a second embodiment will be described. Figure 4A , 4B is a schematic diagram showing the structure of a GaN-based HEMT (compound semiconductor device) according to the second embodiment.
[0043] In the second embodiment, as Figure 4A As shown, an undoped i-GaN layer 12 with a thickness of about 1 μm to 4 μm (for example, a thickness of 3 μm) is formed on a substrate 11, and an undoped i-AlGaN layer 13 a with a thickness of about 1 nm to 30 nm (for example, a thickness of 5 nm) is formed on on the i-GaN layer 12, and an n-type n-AlGaN layer 13b about 3nm to 30nm thick (for example, 30nm thick) is formed on the i-AlGaN layer 13a. The Al composition in i-AlGaN layer 13a and n-AlGaN layer 13b is about 0.1 to 0.5 (for example, 0.2). The n-AlGaN layer 13b is doped with about 1×10 18 cm -3 to 1×10 20 cm -3 (e.g. 5×10 18 cm -3 ) of Si. An n-type n-GaN layer 21 about 2 nm to 20 nm thick (for example, 10 nm thick) is formed on the n-AlGaN layer 13b. The n-GaN ...
no. 3 approach
[0057] Next, a third embodiment will be described. Figure 7 is a schematic diagram showing the structure of a GaN-based HEMT (compound semiconductor device) according to the third embodiment.
[0058] In the third embodiment, if Figure 7 As shown, a buffer layer 31 for covering the exposed portion of the silicon substrate material 11b is formed inside the opening of the sapphire substrate material 11a. For example, an AlN layer or an AlGaN layer about 10 nm to 300 nm thick (for example, 100 nm thick) is used as the buffer layer 31 . The rest of the configuration is the same as the second embodiment.
[0059] According to the third embodiment configured as described above, the strain between the silicon substrate material 11 b and the i-GaN layer 12 and the like are relieved by the buffer layer 31 . This makes the crystallinity of i-GaN layer 12 even more excellent.
[0060] Next, a method for manufacturing the GaN-based HEMT (compound semiconductor device) according to t...
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