Multiple-value resistance random access memory applicable to neural circuit and control method of resistance random access memory

Abstract

The invention discloses a multiple-value resistance random access memory applicable to a neural circuit and a control method of the resistance random access memory. The multiple-value resistance random access memory comprises n resistance random access memories ranging from R1 to Rn and n+1 ports ranging from ln1 to lnn+1, each of the n resistance random access memories is a two-value resistance random access memory, and n resistance random access memories are in series connection, are connected to a set circuit through n-1 ports ranging from ln2 to lnn and are connected to the set circuit or a calculating circuit through the port ln1 and the port lnn+1, wherein, n is a natural number and n>=2. Two or more resistance random access memories are connected in series through the ports and the variable multiple-value resistance random access memory. The multiple-value resistance random access memory can be controlled stably, has good repeatability, and can achieve arithmetic multi-value storage.

Description

technical field [0001] The invention relates to a resistive variable memory, in particular to a multi-value resistive variable memory suitable for neural circuits and a control method thereof. Background technique [0002] The birth of digital computer has become a remarkable achievement since the birth of human civilization, and its rapid development has led human society into the information age. However, digital computers are not perfect, especially the progress in the field of intelligence is not satisfactory. At present, there is no robot based on digital computers that can completely simulate human beings. Compared with digital computers, neural computers have become the core of future intelligent robots due to their strong recognition ability, parallel computing, ability to process both analog information and digital information, and machine self-learning, and will replace digital computers to create new information Intelligent storm. [0003] The key to the realiza...

AI Technical Summary

Problems solved by technology

Although resistive memory has the characteristics of simple structure, small area, and large-scale integration, and can meet the integration requirements of synaptic connections in neural circuits, it is difficult for resistive memory at this stage to realize the synaptic connections of neural circuits. Therefore, the resistance variable memory that can realize variable multi-value storage is of great significance for promoting the development of neural circuits.

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