Plasma processing apparatus and plasma processing method

Abstract

In a plasma processing apparatus for performing a plasma process on a substrate, a damage on a surface of a mounting table can be suppressed without using a dummy wafer when cleaning an inside of the plasma processing apparatus. Upon the completion of a plasma etching process, a surface of the susceptor 3 is exposed, and an inside of a vacuum chamber 1 of the plasma etching apparatus is cleaned by plasma P. Thus, reaction products A adhering to the inside of the vacuum chamber 1 are removed. Here, a DC voltage is applied to the plasma P during the cleaning process. As a result, while obtaining high-density plasma P, the ion energy can be reduced, so that the cleaning process can be performed effectively while suppressing damage on the surface of the susceptor 3.

Description

technical field [0001] The present invention relates to a technique for cleaning the inside of a vacuum container of a plasma processing device by using plasma. Background technique [0002] In the plasma treatment of the surface of a semiconductor wafer in the manufacturing process of a semiconductor device, as the number of times of treatment increases, the amount of reaction products adhering to the inner wall of the vacuum container, the mounting table, etc. increases. Since the processing environment changes when the amount of adhesion increases, the uniformity of processing between wafers may be deteriorated, and it may also be a cause of particle generation. Therefore, for example, the inside of the vacuum container is periodically cleaned by using plasma obtained by plasmating a cleaning gas. The gas uses oxygen (O 2 ) gas to incinerate the CF reaction product. In this case, in order to prevent damage to the surface of the stage, plasma cleaning is usually perform...

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Problems solved by technology

Patent Document 2 describes the cleaning method of the substrate processing chamber, but there is no description of superimposing direct current

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