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Photoetching projection objective

A technology for lithography projection and objective lens, applied in the field of projection objective lens optical system, which can solve the problems of small working distance, coating and glue, object plane and image plane not being parallel to each other, etc.

Active Publication Date: 2012-10-03
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The field of view is off-axis and narrow in one direction, which is not suitable for application in stepper lithography
Second, all the disadvantages of the above patent US7,158,215 cannot be avoided
Moreover, this objective lens has only a small working distance, and the object plane and the image plane are not parallel to each other, resulting in a larger space for the mask and wafer workbench
Dyson type systems require beam splitting prisms which create coating and adhesive issues and also reduce working distance between mask and wafer face

Method used

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  • Photoetching projection objective
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  • Photoetching projection objective

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0059] figure 1 It is a schematic diagram of the optical system of the lithography projection objective lens 30 according to the first embodiment of the present invention.

[0060] The objective lens 30 includes four positive lens groups G1, G2, G3 and G4. The aperture stop AS100 is located between the second lens group G2 and the third lens group G3. The linear magnification of the projection of the mask R onto the wafer W is approximately 1x. The first lens group G1 and the fourth lens group G4 are symmetrical about the diaphragm. The second lens group G2 and the third lens group G3 are also symmetrical about the diaphragm.

[0061] The first lens group G1 converges light from the mask to the second lens group. The first lens group G1 includes six lenses 1, 2, 3, 4, 5, and 6, and their focal powers are negative, negative, positive, positive, positive, and negative in sequence. The first lens group includes two sub-lens groups G1-1n and G1-2n, the first sub-lens group G1...

no. 2 example

[0101] Figure 7 Shown is a schematic diagram of the optical system of the lithography projection objective lens 40 according to the second embodiment of the present invention.

[0102] The objective lens 40 includes four lens groups G1, G2, G3 and G4. The aperture stop AS is located between the second lens group G2 and the third lens group G3. The linear magnification of the projection of the mask R onto the wafer W is approximately 1x. The first lens group G1 and the fourth lens group G4 are symmetrical about the diaphragm. The second lens group G2 and the third lens group G3 are also symmetrical about the diaphragm. The focal powers of lens groups G1, G2, G3 and G4 are positive, negative, negative and positive in sequence.

[0103] The first lens group G1 converges light from the mask to the second lens group. The first lens group G1 includes five lenses 50 , 51 , 52 , 53 , and 54 , and their focal powers are negative, negative, positive, positive, and positive in sequ...

no. 3 example

[0139] Figure 13 Shown is a schematic diagram of the optical system of the lithography projection objective lens 70 according to the third embodiment of the present invention.

[0140] The objective lens 70 includes four positive power lens groups G1, G2, G3 and G4. The aperture stop AS is located between the second lens group G2 and the third lens group G3. The linear magnification of the projection of the mask R onto the wafer W is approximately 1x. The first lens group G1 and the fourth lens group G4 are symmetrical about the diaphragm. The second lens group G2 and the third lens group G3 are symmetrical about the diaphragm.

[0141] The first lens group G1 converges light from the mask R to the second lens group G2. The first lens group G1 includes four lenses 71 , 72 , 73 , 74 , and their focal powers are negative, negative, positive, and positive in sequence. The first lens group G1 includes a sub-lens group G1-1n, the sub-lens group G1-1n has negative refractive p...

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Abstract

The invention relates to a photoetching projection objective which focuses and images a mask on a silicon wafer, and comprises a first lens group, a second lens group, an aperture stop AS, a third lens group symmetrical to the second lens group relative to the aperture stop and a fourth second lens group symmetrical to the first lens group relative to the aperture stop arranged sequentially along the optical axis from the mask.

Description

[0001] technical field [0002] The invention relates to a projection objective lens optical system, in particular to a lithography projection objective lens which can be applied in step exposure equipment. Background technique [0003] Optical lithography is a technique for projectively replicating mask patterns with light. Integrated circuits are made by projection exposure equipment. With the help of projection exposure equipment, patterns with different mask patterns are imaged onto substrates, such as silicon wafers or LCD panels, for the manufacture of a series of structures such as integrated circuits, thin-film magnetic heads, liquid crystal display panels, or micro-electromechanical systems (MEMS). Over the past few decades, the technical level of exposure equipment has been continuously developed to meet the needs of smaller line size, larger exposure area, higher reliability and productivity, and lower cost. In order to achieve such a high-resolution pattern und...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B13/18G02B13/22G03F7/20
Inventor 武珩黄玲
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD