Resistive random access memory and manufacturing method thereof

Abstract

An embodiment of the invention discloses a resistive random access memory and a manufacturing method thereof, and the memory comprises: a gate transistor; a bottom electrode which is electrically connected with the gate transistor; a nanometer electrode protruding out above the bottom electrode; a memory medium layer above the bottom electrode and the nanometer electrode; a top electrode above the memory medium layer. Local electric field intensity near the nanometer electrode in the memory medium layer is enhanced by the protruded nanometer electrode, and conductive filaments can be formed along the nanometer electrode; therefore, the forming quantity of the conductive filaments and the forming and disconnecting paths of the conductive filaments can be effectively controlled; the random formation problem of conductive filaments is solved; device programming voltages are provided with concentricity; and device working stability is improved.

Description

technical field [0001] The present invention relates to a semiconductor storage device and its manufacturing technology, more specifically, to a resistive variable memory and its manufacturing method. Background technique [0002] With the popularity of portable personal devices, non-volatile memory has gradually become the focus of research and development in the semiconductor industry due to its advantages of maintaining a memory state and operating with low power consumption when there is no power supply. At present, the non-volatile memory on the market is still dominated by flash memory (Flash), but due to the excessive operating voltage, slow operation speed, and insufficient durability of flash memory, and the continuous thinning of the tunnel oxide layer during the shrinking of the device size, the retention Due to shortcomings such as insufficient time, the focus of research and development has gradually shifted to a new type of non-volatile memory that can replace ...

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the present invention provides a resistive variable memory and its manufacturing method, which solves the problem of random formation of conductive filaments, makes the programming voltage of the device centralized, and improves the stability of the device operation

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