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Semiconductor laser element and method for manufacturing same

A technology of laser devices and manufacturing methods, which is applied in the direction of semiconductor lasers, laser components, lasers, etc., can solve problems such as the deterioration of the light exit part, and achieve the effect of suppressing the deterioration of the end face

Inactive Publication Date: 2012-10-03
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The results of the study showed that the damage of the light exit part caused the sudden deterioration

Method used

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  • Semiconductor laser element and method for manufacturing same
  • Semiconductor laser element and method for manufacturing same
  • Semiconductor laser element and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Embodiments of the present invention will be described below with reference to the drawings.

[0045] Descriptions are given in the following order.

[0046] 1. Example of the structure of a semiconductor laser device

[0047] 2. TEM image analysis

[0048] 3. Identification method of hexagonal crystal system

[0049] 4. Evaluation of the operating time of semiconductor laser devices with end face protection films

[0050] 1. Example of the structure of a semiconductor laser device

[0051] figure 2 (A) and (B) in (A) and (B) are schematic cross-sectional views showing the structure of the compound semiconductor laser device of the embodiment of the present invention. figure 2 (A) shows the structure in the vertical direction of the laser stripes. figure 2 (B) shows the structure in the horizontal direction of the laser stripes.

[0052] figure 2 The semiconductor laser device 100 in is provided with an n-type cladding layer 102 , a quantum well light-emitti...

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PUM

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Abstract

This invention relates to a semiconductor laser element in which end-surface degradation caused by interfacial oxidation and application of distortion can be reliably suppressed, and to a method for manufacturing the semiconductor laser element. The semiconductor laser element has a laser structure (107) having mutually opposing resonator surfaces (108, 109), and a protective film (110, 120) formed on at least one of the mutually opposing resonator surfaces. The protective film (110, 120) is formed from a nitride dielectric film provided with a multistep crystal structure comprising, in order from the side next to the resonator surface, an amorphous layer (111, 121) and a polycrystalline layer (112, 122).

Description

technical field [0001] The invention relates to a semiconductor laser device and a method for manufacturing the semiconductor laser device. The semiconductor laser device is provided with a protective film of a specific structure on a resonator (resonator) surface. Background technique [0002] In practical applications, high-output compound semiconductor laser devices are used, for example, for writing on optical disks or magneto-optical disks. [0003] figure 1 (A) and (B) are schematic cross-sectional views showing the structure of a general compound semiconductor laser device. figure 1 (A) in shows the structure in the vertical direction of the laser stripe (laser stripe), figure 1 (B) shows the structure in the horizontal direction of the laser stripes. [0004] figure 1 The semiconductor laser device 10 in has an n-type cladding layer (cladding layer) 12 , a quantum well light-emitting layer 13 and a p-type cladding layer 14 formed on a substrate 11 . A p-side ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/028H01S5/323
CPCH01S5/22H01S5/028H01S5/0282H01S5/343H01S5/0021B82Y20/00H01S5/323
Inventor 丹下贵志冨谷茂隆
Owner SONY CORP