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Multiwavelength Semiconductor Laser Devices

A laser device and semiconductor technology, which is applied in the direction of semiconductor lasers, semiconductor laser devices, laser components, etc., can solve the problems of larger changes in monitoring current, larger changes in reflectivity of high-reflection films, etc., and achieve suppression of changes in temperature , Inhibit the deterioration of the end face, and suppress the effect of monitoring the change of the current with temperature

Inactive Publication Date: 2016-12-14
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, since the difference in refractive index between the high-refractive index layer and the low-refractive index layer does not become as large as when Si is used in the high-refractive index layer, the change in reflectance of the high-reflection film with respect to wavelength The amount of change becomes larger
Therefore, there is a problem that the amount of change in the monitor current due to the temperature change of the laser device becomes large.

Method used

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  • Multiwavelength Semiconductor Laser Devices
  • Multiwavelength Semiconductor Laser Devices
  • Multiwavelength Semiconductor Laser Devices

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Embodiment Construction

[0030] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, description will be made in the following order.

[0031] 1. Embodiment

[0032] An example of a mid-refractive index layer arranged on the upper surface side of the back-end membrane.

[0033] 2. Modification

[0034] An example in which the low-refractive index layer is composed of multiple layers, and

[0035] An example in which a low-refractive index layer is arranged on the rear end face side of the rear end film.

[0036] 1. Embodiment

[0037] Figure 1A The planar structure of the dual-wavelength semiconductor laser device 1 of the embodiment of the present invention is shown. Figure 1B show Figure 1A The cross-sectional structure of the dual-wavelength semiconductor laser device 1 in , when viewed along the arrow A-A direction. Figure 1A with 1B The illustrated structure is schematic, and the illustrated size and shape are different from th...

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Abstract

The multi-wavelength semiconductor laser involved in the present invention includes: first and second device parts formed on a substrate singly; End mask. The first device portion is a light emitting device portion having an oscillation wavelength of λ1. The second device portion is a light emitting device portion having an oscillation wavelength of λ2 (λ1<λ2). The rear end film includes layers stacked with N (N≥2) groups of layers and a medium refractive index layer with a refractive index of n2 (n1<n2<n3) from the rear end surface side, and each group of layers in the N groups of layers has a refractive index A combination of a low-refractive-index layer with a refractive index of n1 and a high-refractive-index layer with a refractive index of n3 (n1<n3), and the rear end film is made of a film other than the Si film. The multi-wavelength semiconductor laser device of the present invention can suppress the change of the monitor current with respect to the temperature change of the device while suppressing the occurrence of end face deterioration.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to the disclosures of Japanese Prior Patent Applications JP 2011-075471 and JP 2011-116106 filed with the Japan Patent Office on March 30, 2011 and May 24, 2011, respectively, which are incorporated herein The entire content of the application is incorporated herein by reference. technical field [0003] The present invention relates to a multi-wavelength semiconductor laser device having a monolithic structure, and in particular, to a multi-wavelength semiconductor laser device having an improved reflective film on a high reflective side. Background technique [0004] In recent years, in the field of semiconductor laser devices (LDs; laser diodes), multi-wavelength laser devices in which light-emitting parts having a plurality of different light-emitting wavelengths are formed singly on the same substrate have been actively developed. . For example, a multi-wavelength...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/40H01S5/026
CPCB82Y20/00G11B7/1275H01S5/026H01S5/0284H01S5/0287H01S5/22H01S5/343H01S5/34326H01S5/4031H01S5/4087H01S2301/176
Inventor 高桥义彦及川文武
Owner SONY CORP