Multi-wavelength semiconductor laser device

Abstract

A multi-wavelength semiconductor laser device includes: first and second device sections monolithically formed on a substrate; and a rear end face film formed together on a rear end face of each of the first and second device sections. The first device section is a light-emitting device section having an oscillation wavelength of [lambda]1. The second device section is a light-emitting device section having an oscillation wavelength of [lambda]2 ([lambda]1<[lambda]2). The rear end face film includes a layer in which N sets (N>=2) of layers each having the combination of a low refractive index layer having a refractive index of n1 and a high refractive index layer having a refractive index of n3 (n1<n3) as one set are laminated, and an intermediate refractive index layer having a refractive index of n2 (n1<n2<n3) in order from the rear end face side, and is constituted by a film different from an Si film.

Description

[0001] Cross References to Related Applications [0002] This application contains subject matter related to the disclosures of Japanese Prior Patent Applications JP 2011-075471 and JP 2011-116106 filed with the Japan Patent Office on March 30, 2011 and May 24, 2011, respectively, which are incorporated herein The entire content of the application is incorporated herein by reference. technical field [0003] The present invention relates to a multi-wavelength semiconductor laser device having a monolithic structure, and in particular, to a multi-wavelength semiconductor laser device having an improved reflective film on a high reflective side. Background technique [0004] In recent years, in the field of semiconductor laser devices (LDs; laser diodes), multi-wavelength laser devices in which light-emitting parts having a plurality of different light-emitting wavelengths are formed singly on the same substrate have been actively developed. . For example, a multi-wavelength...

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Problems solved by technology

However, in this case, since the difference in refractive index between the high-refractive index layer and the low-refractive index layer does not become as large as when Si is used in the high-refractive index layer, the change in reflectance of the high-reflection film with respect to wavelength The amount of change becomes larger

Therefore, there is a problem that the amount of change in the monitor current due to the temperature change of the laser device becomes large.

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