Semiconductor laser device and manufacturing method therefor
A technology of laser devices and manufacturing methods, which is applied to semiconductor lasers, laser components, lasers, etc., can solve the problems of time-consuming, inability to fully terminate dangling bonds, and inability to suppress COD, etc., to achieve the effect of suppressing the deterioration of end faces
Inactive Publication Date: 2009-08-26
MITSUBISHI ELECTRIC CORP
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Problems solved by technology
[0010] However, the process of removing the self-oxidized film formed on the light-emitting end surface and the like by plasma treatment with an inert gas, which is generally performed after dicing, cannot sufficiently terminate the dangling bonds.
Furthermore, if the coating film is formed on the light emitting end surface and the light reflecting end surface in the state where the dangling bonds are not sufficiently terminated, the suppression of the interface energy level will be insufficient, and as a result, there is a problem that COD cannot be suppressed.
In addition, as disclosed in Patent Document 1, when irradiating a hydrogen radical beam in a high-vacuum device, there are industrial problems such as time-consuming evacuation of the device.
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Embodiment 1
[0029] refer to figure 1 , to describe the structure of the semiconductor laser device of this embodiment. The semiconductor laser device of this embodiment is composed of a semiconductor laser 11 and a lithium film and a plated film which will be described later.
[0030] The semiconductor laser 11 constitutes the resonator portion of the semiconductor laser device of this embodiment. A semiconductor laser 11 is provided with a substrate 10 . The first cladding layer 12 in contact with the substrate 10 is formed. The active layer 14 is formed in contact with the first cladding layer 12 . Carriers recombine in the active layer 14 to emit light. Furthermore, the second cladding layer 16 in contact with the active layer 14 is formed. Then, an electrode 18 in contact with the second cladding layer 16 is arranged on the surface of the semiconductor laser 11 . On the other hand, an electrode 20 in contact with the substrate 10 is arranged on the back surface of the semiconduc...
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The invention relates to a semiconductor laser device and a manufacturing method thereof. The semiconductor laser device can reduce interface energy lever of an interface between a semiconductor laser (a resonator) and a film coating through a simple method. The invention aims at providing the semiconductor laser device and the manufacturing method thereof, wherein the semiconductor laser device can inhibit instant optical damage (COD) caused by the optical output power of the semiconductor laser. The invention is characterized in that: a dangling bond terminating film which is composed of a lithium film or a beryllium film is formed on a section of the semiconductor laser; and a coating film is formed on the dangling bond terminating film.
Description
technical field [0001] The present invention relates to a semiconductor laser device and a method of manufacturing the same which suppresses the deterioration of the facet. Background technique [0002] After forming an active layer, a cladding layer, etc. by a wafer manufacturing process, the semiconductor laser is diced at a predetermined position. The purpose of the cutting is to form individual semiconductor laser devices. The light emitting end face and the light reflecting end face of the semiconductor laser are exposed on the surface by cutting. [0003] After cutting, a self-oxidized film is formed on the light emitting end surface and the light reflecting end surface. This self-oxidized film is removed by performing plasma treatment with an inert gas such as argon. Aluminum oxide (Al 2 o 3 ) and other coatings. The coating provides protection on the light exit facet and increases its reflectivity on the light reflective facet. [0004] COD (Catastrophic Optic...
Claims
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IPC IPC(8): H01S5/028
CPCH01S5/0202H01S5/028H01S5/0282
Inventor 八木哲哉
Owner MITSUBISHI ELECTRIC CORP