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Magnetic field generator, magnetron cathode, and sputtering device

A magnetron cathode and generating device technology is applied in the sputtering technology field of the magnetron sputtering method to achieve the effects of improving the utilization rate and the strength of the magnetic field

Active Publication Date: 2012-10-10
SHINCRON KK +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Specifically, in the existing structure, the utilization rate of the target is only about 15 to 20%, which will cause problems when using high-priced target materials for film formation

Method used

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  • Magnetic field generator, magnetron cathode, and sputtering device
  • Magnetic field generator, magnetron cathode, and sputtering device
  • Magnetic field generator, magnetron cathode, and sputtering device

Examples

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Effect test

Embodiment Construction

[0031] One embodiment of the above invention will be described below with reference to the drawings.

[0032] "Sputtering Device"

[0033] First, a sputtering apparatus that performs magnetron sputtering as an example of sputtering will be described.

[0034] Such as figure 1 As shown, a sputtering apparatus 1 according to one embodiment of the present invention includes a vacuum chamber 2 capable of evacuating the inside. A substrate holder 4 for holding a film-forming target object 5 facing downward is provided at an upper portion inside the vacuum chamber 2 . In sputtering film formation, the film formation object 5 held as the substrate holder 4 is, for example, a glass substrate, a plastic substrate, or the like. In addition, a pump for evacuation, a gas introduction unit (both are not shown in the drawings), and the like are connected to the vacuum chamber 2 .

[0035] In this embodiment, the lower inner wall portion of the vacuum chamber 2 facing the substrate hold...

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PUM

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Abstract

The purpose of the present invention is to increase a target usage rate. Provided is a magnetic field generator (10) arranged on the rear surface of a target (8) that generates on the front surface (8a) of the target (8) a magnetic field based on a magnetic line of force (11). The magnetic field generator (10) has: an annular outer periphery magnet body (144) with a pole axis in a direction (X direction) parallel to the surface of the target (8); a center magnet body (142) arranged on the inside of the outer periphery magnet body (144) and with a pole axis in a direction (X direction) parallel to the direction of the pole axis of the outer periphery magnet body (144); a yoke plate (12) that supports the outer periphery magnet body (144) and the center magnet body (142) from the rear surfaces thereof; and a magnetic permeable plate (16) that changes the magnetic field distribution of the surface (8a) of the target (8). The magnetic permeable plate (16) is arranged between the outer periphery magnet body (144) and the center magnet body (142). In addition, the magnetic permeable plate (16) is arranged so as to be supported from the rear surface by the yoke plate (12).

Description

technical field [0001] The present invention relates to a magnetic field generating device, a magnetron cathode and a sputtering device, and is especially suitable for sputtering technology (magnetron sputtering technology) which involves a magnetron sputtering method in which plasma is confined near a target by a magnetic field. tube sputtering). Background technique [0002] Among the sputtering methods, magnetron sputtering in which a magnetic field generating device including a plurality of magnets is arranged on the back surface of a target as an object to be processed is the mainstream of the sputtering method. Magnetron sputtering is a method of forming a magnetic field on the surface of the target through a magnet, and using the drift motion of electrons to confine the plasma near the surface of the target, thereby forming a high-density plasma. Since such high-density plasma exists near the surface of the target, high-speed film formation can be realized. [0003]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C03C17/245C23C14/34
CPCH01J37/3452H01J37/3405H01J25/50H01F7/081H01J37/3461C23C14/351C23C14/35C03C17/245C23C14/34
Inventor 孔为林子敬李明谢斌王海千姜友松长江亦周
Owner SHINCRON KK