Method for manufacturing detector, radiation detection apparatus, and radiation detection system
A detector and semiconductor technology, applied in the field of detectors and radiation detection systems, can solve the problems of increased number of masks, increased cost, and reduced aperture ratio
Inactive Publication Date: 2012-10-24
CANON KK
View PDF7 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, if the impurity semiconductor layer of the photoelectric conversion element is covered with a metal layer over a wide range, the aperture ratio (aperture ratio) which is the ratio of the area of the semiconductor layer into which light can enter to the surface area of the photoelectric conversion element decreases
[0006] In addition, if the upper electrode of the photoelectric conversion element and the source and drain electrodes of the TFT are formed in different steps, the number of masks increases
Therefore, yield may decrease and cost may increase
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0017] Some embodiments of the present invention will be described in detail with reference to the accompanying drawings. The radiation mentioned here includes beams generated from particles (including photons) emitted by radioactive decay such as α-rays, β-rays, and γ-rays and beams such as X-rays, corpuscular beams, etc. Beams of the same or greater energy as cosmic rays.
[0018] first refer to Figure 1A with Figure 1B The structure of the pixel of the detector according to the first embodiment of the present invention is described. Figure 1A is the planar view of the pixels of the detector, Figure 1B is along Figure 1A A cross-sectional view taken along the line A-A' in .
[0019] Each pixel 11 of the detector of the embodiment of the present invention includes a photoelectric conversion element 12 that converts radiation or light into electric charge, and a thin film transistor (TFT) 13 or a switching element that outputs an electric signal according to the charge ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a method for manufacturing a detector, a radiation detection apparatus, and a radiation detection system. The method is provided for manufacturing a high-performance plane-type detector without the increase in cost or decrease in yield accompanying the increase in the number of masks. The method includes the first step of forming a first electrode and a control electrode from a first electroconductive film deposited on a substrate, the second step of depositing an insulating film and a semiconductor film in that order after the first step, the third step of depositing an impurity semiconductor film and a second electroconductive film in that order after the second step, and forming a common electrode wire and a first electroconductive member from the second electroconductive film, and the fourth step of forming with the same mask a second electrode and a second electroconductive member from a transparent electroconductive oxide film formed after the third step, and impurity semiconductor layers from the impurity semiconductor film.
Description
technical field [0001] The present invention relates to a method of manufacturing a detector applicable to an analyzer using radiation, a medical image diagnosis device, and a nondestructive inspection device, and to a detector, a radiation detection device, and a radiation detection system. Background technique [0002] In recent years, thin-film semiconductor manufacturing technology has been used for detectors and radiation detection devices using pixel arrays including switching elements such as thin-film transistors (TFTs) and conversion elements such as photoelectric conversion elements. [0003] In some of such detectors, a photoelectric conversion element and a TFT of each pixel are formed on a substrate in a common process (see U.S. Patent No. 6,682,960), and this type of detector will be referred to as planar below. type detector. US Patent No. 6682960 discloses the following technology. It is performed through the same mask to form metal layers such as Al (alumi...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14632H01L27/14687
Inventor 藤吉健太郎望月千织渡边实横山启吾大藤将人川锅润和山弘
Owner CANON KK