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Lithographic apparatus and device manufacturing method

A technology for lithography equipment and alignment equipment, applied in microlithography exposure equipment, semiconductor/solid-state device manufacturing, optomechanical equipment, etc., can solve the problem that a single control thread cannot be used to control the scanner normally

Active Publication Date: 2012-10-24
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if different alignment strategies are required for different products on a scanner, a single thread of control cannot normally be used to control the scanner

Method used

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  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method
  • Lithographic apparatus and device manufacturing method

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Embodiment Construction

[0021] This specification discloses one or more embodiments that incorporate the features of this invention. The disclosed embodiments are merely exemplary of the invention. The scope of the present invention is not limited to these disclosed embodiments. The invention is defined by the appended claims.

[0022] The described embodiments and references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," etc. mean that the described embodiments may include particular features, structures, or characteristics, but each embodiment It may not be necessary to include specific features, structures or characteristics. Also, these terms are not necessarily referring to the same embodiment. In addition, when particular features, structures or characteristics are described in conjunction with an embodiment, it should be understood that it is within the knowledge of those skilled in the relevant art to implement such features, structures or characteristic...

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PUM

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Abstract

A method controls a scanning function of a lithographic apparatus. A first alignment strategy is used. A monitor wafer is exposed to determine baseline control parameters pertaining to the scanning function. The baseline control parameters are periodically retrieved from the monitor wafer. Parameter drift is determined from the baseline control parameters. Corrective action is taken based on the determination. A production wafer is exposed using a second alignment strategy, different to the first alignment strategy. The corrective action is modified so as to be substantially closer to the correction that would have been made had the second alignment strategy been used in exposing the monitor wafer.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of US Provisional Application 61 / 306,065, filed February 19, 2010, which is hereby incorporated by reference in its entirety. technical field [0003] Embodiments of the invention relate to methods and apparatus that can be used, for example, in the process of device fabrication by photolithography. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. For example, lithographic equipment may be used in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a "mask" or "reticle", may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a portion, one or more dies) on a substrate (eg, a silicon wafer). The transfer of the p...

Claims

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Application Information

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IPC IPC(8): G03F7/20G03F9/00
CPCG03F7/70516G03F9/7011G03F9/7019G03F9/7003G03F9/7046G03F7/70525G03F7/70616G03F7/2037H01L21/0274
Inventor A·V·帕迪瑞B·门奇奇科夫
Owner ASML NETHERLANDS BV