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Sensor and manufacturing method thereof

A sensor and graphics technology, applied in the fields of electric solid state devices, semiconductor devices, radiation control devices, etc., can solve the problems of complex manufacturing process, difficult to increase production capacity, and high sensor manufacturing cost, so as to simplify the production process, reduce the number of use, and improve the quality of products. rate effect

Active Publication Date: 2012-11-21
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a sensor and its manufacturing method to solve the technical problems in the prior art that the manufacturing cost of the sensor is relatively high, the manufacturing process is relatively complicated, and the production capacity is difficult to increase

Method used

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  • Sensor and manufacturing method thereof

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Embodiment Construction

[0038] In order to solve the technical problems in the prior art that the manufacturing cost of the sensor is relatively high and the manufacturing process is relatively complicated, the present invention provides a sensor and a manufacturing method thereof.

[0039] In the following embodiments of the present invention, the sensors include various types, such as X-ray sensors and the like. Such as Figure 2a , Figure 2b As shown, the sensor of the present invention includes: a base substrate 32, a set of gate lines 30 and a set of data lines 31 arranged crosswise, and a plurality of grid lines defined by the set of gate lines 30 and a set of data lines 31. Sensing units arranged in an array, each sensing unit includes a thin film transistor device and a photodiode sensing device, wherein,

[0040] The thin film transistor device includes: a gate 38 located on the base substrate 32 and connected to the gate line 30; a gate insulating layer 37 located on the gate 38 and cove...

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Abstract

The invention discloses a sensor and a manufacturing method thereof. The sensor comprises a substrate, a group of grid lines, a group of data lines and multiple arrayed sensing units, wherein the group of grid lines and the group of data lines are arrayed in a cross manner, the multiple arrayed sensing units are defined by the group of grid lines and the group of data lines; each sensing unit comprises a thin film transistor device and a photoelectric diode sensing device; the channel region of each thin film transistor device is arranged upside down, and the source electrode and the drain electrode of each thin film transistor device are positioned between an active layer and a grid. Compared with the prior art, and according to the sensor provided by the invention, the number of mask plates in use is reduced in the manufacturing process, the manufacturing cost is reduced, the production technology is simplified, the productivity of equipment is greatly increased, and the qualified rate of products is greatly improved.

Description

technical field [0001] The invention relates to image detection technology, in particular to a sensor and a manufacturing method thereof. Background technique [0002] With the gradual enhancement of people's self-care awareness, various non-invasive medical detection methods are favored by people. Among many non-destructive detection methods, computed tomography technology has been widely used in our real life. In the composition of computed tomography equipment, an indispensable part is the sensor. [0003] The basic structure of the sensor is shown in Figure 1, each sensing unit of the sensor 12 includes a photodiode 13 and a field effect transistor (Field Effect Transistor, FET) 14, the gate of the field effect transistor 14 and the scanning of the sensor 12 Line (Gate Line) 15 is connected, and the drain electrode of field effect transistor 14 is connected with the data line (Data Line) 16 of sensor 12, and photodiode 13 is connected with the source electrode of field...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L29/786
CPCH01L27/14603H01L27/14689H01L31/1055H01L29/66765H01L29/786H01L29/78669H01L31/0256H01L27/146H01L27/1214H01L27/14616H01L27/14632H01L27/14687H01L27/14692
Inventor 阎长江谢振宇徐少颖李田生
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD