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Semiconductor structure and method for operating same

A method of operation, semiconductor technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as large design area

Active Publication Date: 2012-11-28
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this approach increases the turn-on resistance of the semiconductor structure
In addition, a large design area is required

Method used

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  • Semiconductor structure and method for operating same
  • Semiconductor structure and method for operating same
  • Semiconductor structure and method for operating same

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Embodiment Construction

[0080] The present invention relates to semiconductor structures and methods for their operation. Semiconductor structures include insulated gate bipolar transistors (IGBTs), diodes, or metal oxide semiconductors such as lateral double diffused metal oxide semiconductors (LDMOS) or enhanced metal oxide semiconductor transistors (EDMOS).

[0081] figure 1 and figure 2 A perspective view of a semiconductor structure in an embodiment is shown. Please refer to figure 1 , the semiconductor structure includes a substrate 2 . The first doped region 4 is located in the substrate 2 . The substrate 2 may include silicon-on-insulator (SOI) to save design area and reduce turn-on resistance. The first doped region 4 includes a sub-doped layer 12 , a sub-doped layer 14 and a sub-doped layer 16 . The second doped region 6 is located in the first doped region 4 . The third doped region 8A and the third doped region 8B are located in the second doped region 6 . The well region 18 is l...

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Abstract

The invention discloses a semiconductor structure and a method for operating the same. The semiconductor structure comprises a substrate, a first doping area, a second doping area, a third doping area, a first channel structure and a second grid structure, wherein the first doping area is positioned in the substrate and has a first conduction type; the second doping area is positioned in the first doping area and has a second conduction type opposite to the first conduction type; the third doping area is positioned in the second doping area and has the first conduction type; the first channel structure is provided with a first grid structure; and the first grid structure and the second grid structure are respectively positioned on different sides of the second doping area.

Description

technical field [0001] The present invention relates to a semiconductor structure and its operating method, in particular to a semiconductor structure with improved breakdown voltage and turn-on resistance (turn-on current) and its operating method. Background technique [0002] In semiconductor technology, for example, semiconductor structures such as power devices use lateral double-diffused metal-oxide-semiconductor (LDMOS) and reduced surface field (RESURF) technology suitable for current CMOS processes. In order to increase the breakdown voltage (BVdss) of the semiconductor structure, one method is to reduce the doping concentration of the drain region and increase the drift length. However, this approach increases the turn-on resistance of the semiconductor structure. In addition, a large design area is required. Contents of the invention [0003] The present invention relates to a semiconductor structure and its operation method, which improve the breakdown voltag...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/423H01L29/78H01L29/739H01L29/861
Inventor 吴锡垣陈永初连士进林正基
Owner MACRONIX INT CO LTD