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Germanium-tin co-doped monocrystalline silicon for solar cell and method for preparing same

A technology for solar cells and single crystal silicon, which is applied in the directions of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of high production cost and low conversion efficiency of monocrystalline silicon solar cells, and achieves low production cost, simple craftsmanship

Active Publication Date: 2015-03-18
LONGI GREEN ENERGY TECH CO LTD
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  • Description
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Problems solved by technology

[0004] The purpose of the present invention is to provide a germanium-tin co-doped monocrystalline silicon for solar cells, which solves the problems of low conversion efficiency and high manufacturing cost of monocrystalline silicon solar cells in the prior art

Method used

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  • Germanium-tin co-doped monocrystalline silicon for solar cell and method for preparing same

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Embodiment

[0019] Select single crystal silicon rods A, B, C, D, E and F, wherein single crystal silicon rods C, D, E and F are single crystal silicon rods of the present invention, and the impurity concentration of each crystal rod is as follows:

[0020] Monocrystalline silicon rod A is P-type monocrystalline silicon obtained by the conventional CZ method, and the boron concentration is 60ppbw;

[0021] Single crystal silicon rod B is P-type single crystal silicon containing 100ppmw germanium prepared by CZ method, and the boron concentration is 60ppbw;

[0022] Single crystal silicon rod C is P-type single crystal silicon containing 100ppmw germanium and 100ppbw tin prepared by CZ method, and the boron concentration is 60ppbw;

[0023] Single crystal silicon rod D is P-type single crystal silicon containing 200ppmw germanium and 50ppbw tin prepared by CZ method, and the boron concentration is 60ppbw;

[0024] Single crystal silicon rod E is P-type single crystal silicon containing 10...

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Abstract

The invention discloses a germanium-tin co-doped monocrystalline silicon for a solar cell. The electrically active impurity in the monocrystalline silicon has the final atomic volume concentration of 1,013-1,021atoms / cm<3>, the germanium has the final atomic volume concentration of 1,016-1,019atoms / cm<3>, and the tin has the final atomic volume concentration of 1,013-1,016atoms / cm<3>. The invention further discloses a method for manufacturing the germanium-tin co-doped monocrystalline silicon for the solar cell. The electrically active impurity, the germanium and the tin are doped into the raw materials for preparing the solar monocrystalline silicon at the same time to prepare the monocrystalline silicon by adopting the conventional CZ method. The monocrystalline silicon prepared by adopting the method has better sunlight conversion efficiency and lower light decay rate.

Description

technical field [0001] The invention belongs to the technical field of solar monocrystalline silicon production, and relates to a germanium-tin co-doped monocrystalline silicon for solar cells, and also relates to a preparation method of the germanium-tin co-doped monocrystalline silicon. Background technique [0002] Solar cells can directly convert light energy into electrical energy, which is a way to effectively utilize solar energy and is also an important renewable and clean energy source. In the past ten years, in the rapidly developing photovoltaic industry, high efficiency and low cost have been the two main points of competition. As the most important solar cell material, crystalline silicon has occupied most of the photovoltaic market due to its high efficiency and stability. share. [0003] At present, the main obstacle restricting the large-scale application of single crystal silicon solar cells is still its high cost. The conversion efficiency of solar cells ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06H01L31/0288
Inventor 张群社祁伟
Owner LONGI GREEN ENERGY TECH CO LTD
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