Array substrate and manufacturing method thereof

Abstract

The invention discloses an array substrate and a manufacturing method thereof. The array substrate comprises a substrate, a first thin film transistor and a second thin film transistor; the first thin film transistor and the second thin film transistor are arranged on the substrate at an interval, and a first source drain electrode of the first thin film transistor and an oxide semiconductor layer and a second source drain electrode of the second thin film transistor are arranged on the same layer at intervals; and the second source and drain electrode is in bridge connection with the oxide semiconductor layer. According to the oxide semiconductor thin film transistor, the second source and drain electrodes and the oxide semiconductor layer are arranged at intervals and are in bridge connection, so that the technical problem that when the source and drain electrodes of the oxide semiconductor thin film transistor and an oxide semiconductor material are arranged on the same layer, the dry etching process of the source and drain electrodes easily generates a large number of defects on the surface of the oxide semiconductor layer is effectively solved.

Description

technical field [0001] The present application relates to the field of display technology, in particular to an array substrate and a manufacturing method thereof. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. Among them, low temperature polysilicon (Low Temperature Poly-silicon, LTPS) thin film transistor (Thin Film Transistor, TFT) has the advantages of high mobility, small size, fast charging and switching speed, etc., and has a good effect when used for gate driving; The metal oxide TFT has the advantages of good uniformity and low leakage current; currently, a hybrid TFT using LTPS TFT as gate driver and metal oxide TFT as display pixel...

AI Technical Summary

Problems solved by technology

[0003] The existing hybrid TFT adopts the structure of LTPS TFT and Indium Gallium Zinc Oxide (Indium Gallium Zinc Oxide, IGZO) TFT in the same layer to form the source and drain. However, in this structure, the source and drain of the IGZO TFT overlap with the oxide semiconductor layer. Therefore, the dry etching process of the source and drain electrodes of the IGZO TFT will cause a large number of defects on the surface of the oxide semiconductor layer, thereby destroying the electrical properties of the oxide semiconductor layer.

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