Graphene-based S-shaped waveguide

A graphene, graphene layer technology, applied in waveguides, waveguide-type devices, circuits, etc., to achieve the effects of simple processing, strong flexibility and stability, and easy implementation

Inactive Publication Date: 2012-12-19
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, no one has used graphene to design S-shaped waveguides

Method used

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  • Graphene-based S-shaped waveguide
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  • Graphene-based S-shaped waveguide

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Embodiment Construction

[0013] A kind of S-shaped waveguide based on graphene, comprises silicon substrate 3, is provided with silicon dioxide substrate 2 on silicon substrate 3, the upper surface of silicon dioxide substrate 2 is S-shaped undulating surface, on silicon dioxide A graphene layer 1 is laid on the substrate 2, and the chemical potential of the graphene layer 1 is 0.8eV (the corresponding carrier concentration is 4.7eV 13 cm -2 ), the shape of the graphene layer 1 matches the shape of the upper surface of the silicon dioxide substrate 2 . The chemical potential of graphene can be realized by chemical doping. In the current technology, molecular adsorption technology such as tetracyanodimethylbenzoquinone is used for doping, so that the carrier concentration of graphene can reach 1e 14 cm -2 .

[0014] The conductivity of graphene can be expressed by the Kubo formula ("Dyadic Green's functions and guided surface waves for a surface conductivity model of graphene," J. Appl. Phys. 103(6)...

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Abstract

A graphene-based S-shaped waveguide comprises a silicon substrate. A silicon dioxide substrate is arranged on the silicon substrate, the upper surface of the silicon dioxide substrate is an S-shaped wavy surface, a graphene layer is laid on the silicon dioxide substrate, chemical potential of graphene of the graphene layer is 0.8eV (corresponding carrier concentration is 4.7e<13>cm<-2>), and the shape of the graphene layer is matched with that of the upper surface of the silicon oxide substrate. The chemical potential of the graphene can be realized by a chemical doping method, and a molecular adsorption technology for tetracyanoquinodimethane and the like is adopted for doping, so that the carrier concentration of the graphene can reach 1e<14>cm<-2>.

Description

technical field [0001] The invention relates to a graphene-based S-shaped curved waveguide, especially the graphene-based S-shaped curved waveguide, which can propagate surface plasmon polarized waves on a curved surface. Background technique [0002] The emergence of surface plasmon polarized waves provides the possibility to break through the diffraction limit and realize sub-wavelength optoelectronic devices and optoelectronic integrated circuits. Optical waveguides are essential devices in integrated optics. Bending in the optical waveguide is necessary due to the change of the beam propagation direction in the optical waveguide. When a common metal-based surface plasmon polarized waveguide encounters a curved or uneven plane, radiation loss caused by curvature will occur. Since the refractive index of the surface plasmon polarized wave supported on the metal is relatively small, the local Relatively weak, after the scattering loses a part of the momentum, the refracti...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P3/18
Inventor 陆卫兵朱薇许红菊
Owner SOUTHEAST UNIV
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