Voltage reference source with low power consumption and low temperature coefficient

A technology of low temperature coefficient, voltage reference source, used in regulating electrical variables, control/regulating systems, instruments, etc.

Inactive Publication Date: 2013-01-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention solves the problem that the reference source power supply voltage in the above-mentioned prior art is high, the reference output voltage provided is high, the power consumption is high, and the structure is relatively complicated and other technical problems, a voltage reference source with low power consumption and low temperature coefficient is proposed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage reference source with low power consumption and low temperature coefficient
  • Voltage reference source with low power consumption and low temperature coefficient
  • Voltage reference source with low power consumption and low temperature coefficient

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] As a preferred embodiment of the present invention, the present invention discloses a voltage reference source with low power consumption and low temperature coefficient, which includes a compensation current generating circuit and a first-order temperature compensation circuit. The compensation current of the compensation current generating circuit is determined by the working Provided by the NMOS tube in the subthreshold area, the first-order temperature compensation circuit is composed of an enhanced NMOS tube and a depletion-type NMOS tube, the compensation current generation circuit is connected with the first-order compensation circuit, and the compensation current generation circuit works in the subthreshold area The depletion-type NMOS transistor introduces compensation current for the first-order compensation circuit, thereby outputting a reference voltage with a low temperature coefficient.

Embodiment 2

[0022] As the best implementation mode of the present invention, it will be specifically described below in conjunction with the accompanying drawings:

[0023] The schematic diagram of the low power consumption and low temperature coefficient voltage reference source circuit of the present invention is as follows: figure 1 shown.

[0024] Wherein, the compensation current generating circuit includes a depletion-type NMOS transistor MD1 and an enhanced-type NMOS transistor ME0 and ME1. Among them, the drain of the depletion NMOS transistor MD1 is connected to the external power supply voltage, the gate of the depletion NMOS transistor MD1 is grounded, the source of the depletion NMOS transistor MD1, the drain and the gate of the enhancement NMOS transistor ME0 are connected to the enhancement The gate of the enhanced NMOS transistor ME1 is connected as node A, the source of the enhanced NMOS transistor ME0 is grounded, the source of the enhanced NMOS transistor ME1 is ground...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a voltage reference source with low power consumption and low temperature coefficient and relates to the technical field of power voltage. The voltage reference source comprises a compensation current generation circuit and a first-order temperature compensation circuit, wherein the compensation current of the compensation current generation circuit is supplied by an N-channel metal oxide semiconductor (NMOS) tube which works in a sub-threshold region; the first-order temperature compensation circuit consists of an enhanced NMOS tube and a depleted NMOS tube; the compensation current generation circuit is connected with the first-order temperature compensation circuit; and the compensation current is introduced into the first-order temperature compensation circuit by the depleted NMOS tube in the compensation current generation circuit, which works in the sub-threshold region, so reference voltage with the low temperature coefficient is output. By adding a zero temperature coefficient point to a reference voltage temperature curve, a reference module is high in temperature stability; and meanwhile, the voltage reference source has the characteristics of low power consumption and the like, can work under low power voltage, and is applicable to an analog integrated circuit, a high-accuracy digital to analog conversion circuit and a pure digital integrated circuit.

Description

[0001] technical field [0002] The invention relates to the technical field of power supply voltage, in particular to a voltage reference source with low power consumption and low temperature coefficient. Background technique [0003] High-precision voltage reference sources with high power supply rejection ratio and low temperature coefficient are required in analog, digital-analog hybrid, and even pure digital circuits. The stability of the voltage reference directly determines the quality of the circuit performance. The indicators describing the stability of the voltage reference source mainly include: power supply rejection ratio, temperature coefficient, etc. In order to meet the requirements of the circuit to work normally under harsh external temperature environment and to improve the power utilization efficiency, the voltage reference must have the characteristics of high temperature stability, high power supply rejection ratio and low power consumption. [0004]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
Inventor 甄少伟龚靖龚剑胡烽罗萍贺雅娟张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products